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HN2C01FU

产品描述Audio Frequency General Purpose Amplifier Applications
产品类别分立半导体    晶体管   
文件大小225KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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HN2C01FU概述

Audio Frequency General Purpose Amplifier Applications

HN2C01FU规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证符合
厂商名称Toshiba(东芝)
包装说明SMALL OUTLINE, R-PDSO-G6
针数6
Reach Compliance Codeunknow
ECCN代码EAR99
最大集电极电流 (IC)0.15 A
基于收集器的最大容量3.5 pF
集电极-发射极最大电压50 V
配置SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)120
JESD-30 代码R-PDSO-G6
元件数量2
端子数量6
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
功耗环境最大值0.2 W
最大功率耗散 (Abs)0.2 W
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)80 MHz
VCEsat-Max0.25 V
Base Number Matches1

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HN2C01FU
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
HN2C01FU
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current : V
CEO
= 50V, I
C
= 150mA (max)
High h
FE
Excellent h
FE
linearity
: h
FE
= 120~400
: h
FE
(I
C
= 0.1mA) / (I
C
= 2mA)
= 0.95 (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
60
50
5
150
30
200
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Total rating
Note:
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1B
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 100mA, I
B
=10mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MH
z
Min
120
80
Typ.
0.1
2
Max
0.1
0.1
400
0.25
3.5
Unit
μA
μA
V
MH
z
pF
Note: h
FE
classification
Y(Y): 120~240, GR(G): 200~400
( ) marking symbol
Marking
Equivalent Circuit
(Top View)
1
2007-11-01

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描述 Audio Frequency General Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications

 
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