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HN1D01FU

产品描述0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE
产品类别分立半导体    二极管   
文件大小330KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

HN1D01FU概述

0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE

HN1D01FU规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证符合
厂商名称Toshiba(东芝)
零件包装代码SOD
包装说明1-2T1B, 6 PIN
针数6
Reach Compliance Codeunknow
ECCN代码EAR99
应用ULTRA FAST RECOVERY
配置2 BANKS, COMMON ANODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.2 V
JESD-30 代码R-PDSO-G6
最大非重复峰值正向电流2 A
元件数量4
相数1
端子数量6
最高工作温度125 °C
最大输出电流0.1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散0.2 W
认证状态Not Qualified
最大重复峰值反向电压85 V
最大反向电流0.5 µA
最大反向恢复时间0.004 µs
反向测试电压80 V
表面贴装YES
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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HN1D01FU
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01FU
Ultra High Speed Switching Application
Small package
Low forward voltage
Small total capacitance
: V
F (3)
= 0.92V (typ.)
: C
T
= 2.2pF (typ.)
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
Unit in mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
300*
100*
2*
200
125
−55~125
Unit
V
V
mA
mA
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode
is 75% of the single diode one.
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
1-2T1B
Electrical Characteristics
(Q1, Q2, Q3, Q4 Common, Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 30V
V
R
= 80V
V
R
= 0, f = 1MHz
I
F
= 10mA (fig.1)
Min
Typ.
0.61
0.74
0.92
2.2
1.6
Max
1.20
0.1
0.5
4.0
4.0
μA
pF
ns
V
Unit
1
2007-11-01

HN1D01FU相似产品对比

HN1D01FU HN1D01FU_07
描述 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE

 
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