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HN1D01F_07

产品描述0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小226KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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HN1D01F_07概述

0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE

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HN1D01F
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01F
Ultra-High-Speed Switching Applications
Unit: mm
Small package
Low forward voltage
Small total capacitance
: V
F (3)
= 0.92 V (typ.)
: C
T
= 2.2 pF (typ.)
Fast reverse recovery time : t
rr
= 1.6 ns (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
300 (*)
100 (*)
2 (*)
300 (*)
125
−55~125
Unit
V
V
mA
mA
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) These are the Absolute Maximum Ratings for a single diode (Q1 or Q2 or Q3 or Q4). If Unit 1 and Unit 2 are
used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those of a single
diode.
JEDEC
SC-74
JEITA
1-3K1A
TOSHIBA
Weight: 0.015 g (typ.)
Electrical Characteristics
(Q
1
, Q
2
, Q
3
, Q
4
Common, Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 30 V
V
R
= 80 V
V
R
= 0, f = 1 MHz
I
F
= 10 mA (Fig. 1)
Min
Typ.
0.61
0.74
0.92
2.2
1.6
Max
1.20
0.1
0.5
4.0
4.0
μA
pF
ns
V
Unit
1
2007-11-01

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HN1D01F_07 HN1D01F
描述 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE

 
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