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HN1C01FE

产品描述Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
产品类别分立半导体    晶体管   
文件大小189KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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HN1C01FE概述

Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications

HN1C01FE规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
包装说明SMALL OUTLINE, R-PDSO-F6
针数6
Reach Compliance Codeunknow
ECCN代码EAR99
最大集电极电流 (IC)0.15 A
集电极-发射极最大电压50 V
配置SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)120
JESD-30 代码R-PDSO-F6
元件数量2
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)80 MHz
Base Number Matches1

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HN1C01FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C01FE
Audio Frequency General Purpose Amplifier Applications
Small package (Dual type)
High voltage and high current
: V
CEO
= 50V, I
C
= 150mA (max)
High h
FE
: h
FE
= 120~400
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
60
50
5
150
30
100
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2N1G
temperature/current/voltage and the significant change in
Weight: 3.0mg(typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics
(Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
120
80
Typ.
0.1
2
Max
0.1
0.1
400
0.25
V
MHz
pF
Unit
μA
μA
Note: h
FE
Classification Y (Y): 120~240, GR (G): 200~400
( ) Marking Symbol
Marking
Type Name
6
5
4
hFE Rank
Equivalent Circuit
(Top View)
6
5
4
C1
1
2
3
Q1
Q2
1
2
3
1
2007-11-01

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