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HN1C01FU_07

产品描述Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
文件大小231KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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HN1C01FU_07概述

Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications

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HN1C01FU
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C01FU
Audio Frequency General Purpose Amplifier Applications
Small package (Dual type)
High voltage and high current
: V
CEO
= 50V, I
C
= 150mA (max)
High h
FE
: h
FE
= 120~400
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
60
50
5
150
30
200
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Note:
Electrical Characteristics
(Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
120
80
Typ.
0.1
2
Max
0.1
0.1
400
0.25
3.5
V
MHz
pF
Unit
μA
μA
Note: h
FE
Classification
Y (Y): 120~240, GR (G): 200~400
( ) Marking Symbol
1
2007-11-01

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描述 Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications

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