HN1B26FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
HN1B26FS
General-Purpose Amplifier Applications
1.0±0.05
Unit: mm
0.1±0.05
0.35 0.35
0.8±0.05
0.1±0.05
0.15±0.05
Q1
•
High voltage and high current
: V
CEO
= 50 V, I
C
= 100 mA (max)
•
•
Excellent h
FE
linearity : h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
High h
FE
:
h
FE
= 120~400
1.0±0.05
0.7±0.05
1
2
3
6
5
4
0.1±0.05
: V
CEO
=
−50
V, I
C
=
−100
mA (max)
•
•
Excellent h
FE
linearity :
h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA) =
−0.95
(typ.)
High h
FE
:
h
FE
= 120~400
0.48
-0.04
+0.02
Q2
•
High voltage and high current
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
60
50
5
100
30
Unit
V
V
V
mA
mA
fS6
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
―
―
2-1F1D
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
JEITA
TOSHIBA
Weight: 0.0008 g (typ.)
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
−50
−50
−5
−100
−30
Unit
V
V
V
mA
mA
Q1, Q2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
T
j
T
stg
Rating
50*
150
−55~150
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
1
2007-11-01
HN1B26FS
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
=
60 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
⎯
⎯
120
⎯
60
⎯
Typ.
⎯
⎯
⎯
0.1
⎯
0.95
Max
0.1
0.1
400
0.25
⎯
⎯
Unit
μA
μA
⎯
V
MHz
pF
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
⎯
⎯
120
⎯
80
⎯
Typ.
⎯
⎯
⎯
−0.18
⎯
1.6
Max
−0.1
−0.1
400
−0.3
⎯
⎯
Unit
μA
μA
⎯
V
MHz
pF
Note: h
FE
classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Marking
(top view)
Type name
hFE Rank
Equivalent Circuit
6
5
4
TF
Q1
Q2
1
2
3
2
2007-11-01
HN1B26FS
Q1
IC - VCE
120
2.0
COLLECTOR CURRENT IC (mA)
100
80
60
40
20
COMMON EMITTER
Ta = 25°C
0
0
1
2
3
4
5
6
7
COLLECTOR-EMITTER VOLTAGE VCE (V)
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1.5
1.0
0.7
0.5
0.3
0.2
IB=0.1mA
DC CURRENT GAIN hFE
1000
Ta = 100°C
25
hFE - IC
100
-25
COMMON EMITTER
VCE = 6V
VCE = 1V
VCE(sat) - IC
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
COMMON EMITTER
IC/IB = 10
10
VBE(sat) - IC
COMMON EMITTER
IC/ IB = 10
25
1
-25
0.1
25
Ta = 100°C
Ta = 100°C
-25
0.01
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
0.1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
IB - VBE
1000
BASE CURRENT IB (μA)
100
Ta = 100°C
10
25
-25
1
COMMON EMITTER
VCE = 6V
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
BASE-EMITTER VOLTAGE VBE (V)
3
2007-11-01
HN1B26FS
Q2
IC - VCE
-120
-2.0
-100
COLLECTOR CURRENT IC (mA)
-80
-60
-40
-20
IB = -0.1mA
0
-0
0
-0
-1
-2
-3
-4
-5
-6
-7
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
COMMON EMITTER
IC/IB = 10
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
-10
COMMON EMITTER
IC/IB = 10
10
-0.1
1000
COMMON EMITTER
Ta = 25°C
DC CURRENT GAIN hFE
-1.5
Ta = 100°C
25
hFE - IC
-1.0
-0.7
-0.5
-0.3
-0.2
100
-25
COMMON EMITTER
VCE =
−
6V
VCE =
−1V
-1
-10
-100
COLLECTOR CURRENT IC (mA)
VBE(sat) - IC
-0.1
Ta = 100°C
-1
-25
25
-25
-0.01
-0.1
25
Ta = 100°C
-1
-10
-100
-0.1
-0.1
-1
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
IB - VBE
-1000
BASE CURRENT
IB
(uA)
-100
Ta = 100°C
-10
-25
25
-1
COMMON EMITTER
VCE =
−
6V
-0.1
0
-0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
BASE-EMITTER VOLTAGE VBE (V)
4
2007-11-01
HN1B26FS
Q1, Q2 COMMON
PC*- Ta
COLLECTOR POWER DISSIPATION PC (mV)
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
*: Total rating
5
2007-11-01
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