HN1A26FS
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process)
HN1A26FS
Frequency General-Purpose Amplifier Applications
•
•
•
•
•
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
High voltage: V
CEO
=
−50
V
High current: I
C
=
−100
mA (max)
1.0±0.05
0.1±0.05
0.35 0.35
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
0.15±0.05
High h
FE
: h
FE
= 120 to 400
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA) = 0.95 (typ.)
0.7±0.05
1
2
3
6
5
4
0.1±0.05
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
(Note 1)
T
j
T
stg
Rating
−50
−50
−5
−100
−30
50
150
−55
~ 150
Unit
V
V
V
mA
mW
mW
°C
°C
0.48
-0.04
+0.02
Absolute Maximum Ratings
(Ta = 25°C)
fS6
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
―
JEITA
―
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-1F1D
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.001g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating.
Note:
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
⎯
⎯
120
―
80
⎯
Typ.
⎯
⎯
⎯
−0.18
⎯
1.6
Max
−0.1
−0.1
400
−0.3
⎯
⎯
V
MHz
pF
Unit
μA
μA
Note: h
FE
Classification
( ) Marking symbol
Y (F): 120 ~ 140, GR (H): 200 ~ 400
Equivalent Circuit
(top view)
6
5
4
Marking
Type Name
h
FE
Rank
Q2
Q1
8F
1
2
3
1
2007-11-01
HN1A26FS
Q1, Q2 Common
IC - VCE
-120
-2.0
-100
COLLECTOR CURRENT IC (mA)
-80
-60
-40
-20
IB = -0.1mA
0
-0
0
-0
-1
-2
-3
-4
-5
-6
-7
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
COMMON EMITTER
IC/IB = 10
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
-10
COMMON EMITTER
IC/IB = 10
10
-0.1
1000
COMMON EMITTER
Ta = 25°C
DC CURRENT GAIN hFE
-1.5
Ta = 100°C
25
hFE - IC
-1.0
-0.7
-0.5
-0.3
-0.2
100
-25
COMMON EMITTER
VCE =
−
6V
VCE =
−
1V
-1
-10
-100
COLLECTOR CURRENT IC (mA)
VBE(sat) - IC
-0.1
Ta = 100°C
-1
-25
25
-25
-0.01
-0.1
25
Ta = 100°C
-1
-10
-100
-0.1
-0.1
-1
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
IB - VBE
-1000
COLLECTOR POWER DISSIPATION PC (mV)
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
PC - Ta
Mounted on FR4 board
(10 mm × 10 mm × 1 mmt)
BASE CURRENT
IB
(uA)
-100
Ta = 100°C
-10
-25
25
-1
COMMON EMITTER
VCE =
−
6V
-0.1
0
-0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
BASE-EMITTER VOLTAGE VBE (V)
80
100 120 140 160 180
AMBIENT TEMPERATURE Ta (°C)
2
2007-11-01
HN1A26FS
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
20070701-EN GENERAL
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
•
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
•
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
3
2007-11-01
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