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CMS15

产品描述3 A, 60 V, SILICON, RECTIFIER DIODE
产品类别分立半导体    二极管   
文件大小184KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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CMS15概述

3 A, 60 V, SILICON, RECTIFIER DIODE

CMS15规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Toshiba(东芝)
包装说明R-PDSO-F2
针数2
制造商包装代码3-4E1A
Reach Compliance Codeunknow
ECCN代码EAR99
Is SamacsysN
应用GENERAL PURPOSE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.58 V
JESD-30 代码R-PDSO-F2
最大非重复峰值正向电流60 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-40 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压60 V
最大反向电流300 µA
反向测试电压60 V
表面贴装YES
技术SCHOTTKY
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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CMS15
TOSHIBA Schottky Barrier Diode
CMS15
Switching Mode Power Supply Applications
(Output voltage:
≤12
V)
DC/DC Converter Applications
Forward voltage: V
FM
= 0.58 V (max)
Average forward current: I
F (AV)
= 3.0 A
Repetitive peak reverse voltage: V
RRM
= 60 V
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak surge current
Junction temperature
Storage temperature range
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
60
3.0 (Note 1)
60 (50Hz)
−40~150
−40~150
Unit
V
A
A
°C
°C
Note 1: Tℓ
=
95°C
Device mounted on a ceramic board
Board size: 50 mm
×
50 mm
Soldering size: 2 mm
×
2 mm
Board thickness: 0.64 t
Rectangular waveform (α
=
180°), V
R
=
30 V
JEDEC
JEITA
Note 2: Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-4E1A
high temperature/current/voltage and the significant change in
Weight: 0.023 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Peak forward voltage
Symbol
V
FM (1)
V
FM (2)
V
FM (3)
Peak repetitive reverse current
Junction capacitance
I
RRM (1)
I
RRM (2)
C
j
Test Condition
I
FM
=
1.0 A (pulse test)
I
FM
=
2.0 A (pulse test)
I
FM
=
3.0 A (pulse test)
V
RRM
=
5 V (pulse test)
V
RRM
=
60 V (pulse test)
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 t)
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 2.1 mm
×
1.4 mm)
(board thickness: 1.6 t)
Thermal resistance
(junction to lead)
R
th (j-ℓ)
Min
Typ.
0.43
0.49
0.55
1.0
25
102
Max
0.58
300
60
μA
pF
V
Unit
135
°C/W
210
16
°C/W
1
2006-11-13

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