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CY7C1381CV25-117AXI

产品描述Standard SRAM, 512KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
产品类别存储   
文件大小515KB,共35页
制造商Cypress(赛普拉斯)
标准  
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CY7C1381CV25-117AXI概述

Standard SRAM, 512KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

CY7C1381CV25-117AXI规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Cypress(赛普拉斯)
零件包装代码QFP
包装说明LQFP,
针数100
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
Is SamacsysN
最长访问时间7.5 ns
其他特性FLOW-THROUGH ARCHITECTURE
JESD-30 代码R-PQFP-G100
JESD-609代码e3
长度20 mm
内存密度18874368 bit
内存集成电路类型STANDARD SRAM
内存宽度36
湿度敏感等级3
功能数量1
端子数量100
字数524288 words
字数代码512000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织512KX36
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.6 mm
最大供电电压 (Vsup)2.625 V
最小供电电压 (Vsup)2.375 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层MATTE TIN (800)
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间40
宽度14 mm
Base Number Matches1

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CY7C1381CV25
CY7C1383CV25
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
Features
• Supports 133-MHz bus operations
• 512K X 36/1M X 18 common I/O
• 2.5V +/–5% core power supply (V
DD
)
• 2.5V I/O supply (V
DDQ
)
• Fast clock-to-output times
— 6.5 ns (133-MHz version)
— 7.5 ns (117-MHz version)
— 8.5 ns (100-MHz version)
• Provide high-performance 2-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Offered in JEDEC-standard 100-pin TQFP,119-ball BGA
and 165-ball fBGA packages
• JTAG boundary scan for BGA and fBGA packages
• “ZZ” Sleep Mode option
Functional Description
[1]
The CY7C1381CV25/CY7C1383CV25 is a 2.5V, 512K x 36
and 1M x 18 Synchronous Flow through SRAMs, respectively
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
1
), depth-expansion Chip Enables (CE
2
and CE
3[2]
), Burst
Control inputs (ADSC, ADSP, and ADV), Write Enables (BW
x
,
and BWE), and Global Write (GW). Asynchronous inputs
include the Output Enable (OE) and the ZZ pin.
The CY7C1381CV25/CY7C1383CV25 allows either inter-
leaved or linear burst sequences, selected by the MODE input
pin. A HIGH selects an interleaved burst sequence, while a
LOW selects a linear burst sequence. Burst accesses can be
initiated with the Processor Address Strobe (ADSP) or the
cache Controller Address Strobe (ADSC) inputs. Address
advancement is controlled by the Address Advancement
(ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1381CV25/CY7C1383CV25 operates from a +2.5V
core power supply. All outputs also operate with a +2.5 supply.
All
inputs
and
outputs
are
JEDEC-standard
JESD8-5-compatible.
Selection Guide
133 MHz
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
6.5
210
70
117 MHz
7.5
190
70
100 MHz
8.5
175
70
Unit
ns
mA
mA
Notes:
1. For best–practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
2. CE
3,
CE
2
are for TQFP and 165 fBGA package only. 119 BGA is offered only in 1 Chip Enable.
Cypress Semiconductor Corporation
Document #: 38-05241 Rev. *B
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised April 19, 2004
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