电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

30QWK2CZ47

产品描述30 A, 120 V, SILICON, RECTIFIER DIODE
产品类别分立半导体    二极管   
文件大小168KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

30QWK2CZ47概述

30 A, 120 V, SILICON, RECTIFIER DIODE

30QWK2CZ47规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码SOD
包装说明R-PSFM-T3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性LOW NOISE
应用GENERAL PURPOSE
外壳连接ISOLATED
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.85 V
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流250 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-40 °C
最大输出电流30 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压120 V
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
30QWK2CZ47
TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
30QWK2CZ47
Switching Type Power Supply Application
Converter & Chopper Application
Repetitive peak reverse voltage: V
RRM
= 120 V
Peak Forward Voltage: V
FM
= 0.85 V (max)
Average output recified current: I
O
= 30 A
Low switching losses and output noise
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average output recified current
Peak one cycle surge forward current
(non-repetitive, sine wave)
Junction temperature
Storage temperature range
Screw Torque
Symbol
V
RRM
I
O
I
FSM
T
j
T
stg
Rating
120
30
250 (50 Hz)
−40~150
−40~150
0.6
Unit
V
A
A
°C
°C
N½m
JEDEC
JEITA
TOSHIBA
12-10C1A
Weight: 2.0 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
Symbol
V
FM
I
RRM
C
j
R
th (j-c)
Test Condition
I
FM
=
15 A
V
RRM
=
Rated (120 V)
V
R
=
10 V, f
=
1.0 MHz
Total DC, Junction to case
Min
Typ.
227
Max
0.85
50
2.5
Unit
V
μA
pF
°C/W
Note: V
FM
, I
RRM
, C
j
: A value applied to one cell.
Polarity
1
2006-11-10

30QWK2CZ47相似产品对比

30QWK2CZ47 30QWK2CZ47_06
描述 30 A, 120 V, SILICON, RECTIFIER DIODE 30 A, 120 V, SILICON, RECTIFIER DIODE

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 513  253  1803  2361  1748  32  31  47  11  12 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved