S-AV40
TOSHIBA RF POWER AMPLIFIER MODULE
S-AV40
FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS
½Power
Gain: 34.7 dB (Min.)
½Total
Efficiency: 40% (Min.)
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C, I
T
< 8 A,
Z
G
= Z
L
= 50Ω
)
CHARACTERISTICS
Maximum Current
Power Supply Voltage
Control Voltage
Instantaneous Output Power
Input Power
Operating Case Temperature
Storage Temperature
SYMBOL
I
T
V
DD
V
GG
Pomax
P
i
T
c (opr)
T
stg
V
GG
=
0 V (GND), RF: none
10.5
≤
V
DD
≤
16.5 V, Pi = 50 mW
V
GG
≤
5.5 V, Pi = 50 mW, 10.5
≤
V
DD
≤
16.5V, within 2 seconds
10.5
≤
V
DD
≤
16.5 V, V
GG
≤
5.5 V
10.5
≤
V
DD
≤
16.5 V, V
GG
≤
5.5 V, Pi = 50
mW (Note 2)
TEST CONDITION
RATING
8
16.5
5.5
40
100
-30 to 100
-40 to 110
UNIT
A
V
V
W
mW
°C
°C
Note 1: The maximum ratings are the limits that must not be exceeded even for an instant, under worst possible
conditions. Exceeding the ratings may cause device damage, ignition, or deterioration. Therefore, when
designing the circuitry, derating factors should be applied so that the absolute maximum ratings are not
exceeded.
Note 2: The output power rating satisfies the range shown in Figures 1 and 2 according to the operating case
temperature. Ensure that the device should be operated within the specified operating range. The figures below
indicate the output power obtained 2 seconds after Po is generated.
Pomax-Tc
35
30
25
20
15
10
5
0
-30 -20 -10
0
10
20
30
40
50
60
70
80
90
100
Tc (℃)
PDmax-Tc
100
90
80
70
PDmax(W)
60
50
40
30
20
10
0
-30 -20 -10
0
10
20
30 40
Tc(℃)
50
60
70
80
90 100
Pomax(W)
Power dissipation (PD)
PD = (VDD × IDD) – Po + Pi
Figure 1 Pomax-Tc
Figure 2 PDmax-Tc
*When the device is used at Tc =100°C, the output power rating is 30 W as shown in Figure 1. When the power
dissipation at Tc = 100°C exceeds the rating shown in Figure 2, the output derating is required to limit the dissipation
within the specified range.
Note 3: The case temperature is monitored using the screw terminal blocks on the input side that are used for the
module implementation.
Note 4: To protect a device from being permanently damaged, the power-on sequence must be as follows (, while the
reversed order should be applied when turning off): 1. VDD, 2. Pi, 3. VGG
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2007-10-01
S-AV40
PACKAGE OUTLINE
Unit in mm
⑤
①
②
③
④
①
RF Input
②
V
GG
③
V
DD
④
RF Output
⑤
GROUND(FRANGE)
JEDEC
JEITA
TOSHIBA
Weight: 11.8g
—
—
5-32G
ELECTRICAL CHARACTERISTICS
(Tc = 25°C,
Z
G
= 50Ω
)
CHARACTERISTICS
Frequency Range
Output Power
Power Gain
Total Efficiency
Input VSWR
Second Harmonic
Third Harmonic
SYMBOL
f
range
P
o
G
p
η
T
VSWRin
2nd HRM
3rd HRM
10.5 V
≤
V
DD
≤
16.5 V, 0 V
≤
V
GG
≤
V
GGajs
(V
GG
= V
GGajs
@ Po = 30 W)
Ruggedness
—
Pi = 50 mW
P
o
= 30 W (Adjusted via V
GG
@ Z
L
= 50Ω)
VSWR LOAD 20: 1 ALL PHASE (@ 2 s)
10.5 V
≤
V
DD
≤
16.5 V, 0 V
≤
V
GG
≤
V
GGajs
Stability
—
(V
GG
= V
GGajs
@ Po = 30 W)
Pi = 50 mW
P
o
≤
30 W (Adjusted via V
GG
@ Z
L
= 50Ω)
VSWR LOAD 3: 1 ALL PHASE
No spurious output
of -60 dB or greater
—
No Damage
—
V
DD
= 12.5 V
V
GG
= 5 V
Pi = 50 mW
Z
L
= 50
Ω
TEST CONDITION
—
MIN
220
30
34.7
40
—
—
—
TYP.
—
—
—
—
—
—
—
MAX
246
—
—
—
3.0
-25
-30
UNIT
MHz
W
dB
%
—
dB
dB
Note 5:The output power is intended to follow the rating provided in Figure 1 in Note 2.
Note 6: Stability
Measurements are performed under the conditions where VSWR is at 3:1 through all phases over the whole frequency
range, and they are guaranteed only under those conditions. Even though it is guaranteed to be stable where VSWR is
at 3:1, the VSWR load over the operating frequency should be designed to be 50
Ω.
At the same time, ensure that the
VSWR load does not deviate much from 50Ω even for a moment, nor deviate even a little from 50Ω continually. The
S-AV40 is not intended for such operations, and proper operation under such conditions is not guaranteed due to the
possibilities of heat generation in the module and its applications.
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2007-10-01
S-AV40
HANDLING PRECAUTIONS
½
Since this product has a protective cap, care should be taken to avoid applying an excessive impact and allowing
foreign objects to get inside when handling this product. Also, please do not remove a cap. If the cap is removed,
the foreign object inside the module or the applied impact may lead IC failure, causing smoke or ignition.
½
Since this product is structurally susceptible to static electricity, protections against the static electricity should be
applied to objects that may come in direct contact with devices, such as worktables, equipment, operators and
solder irons.
・This
product is not designed nor intended to perform a continuous transmission for applications like a base station.
Please do not use this product for such applications, for the reliability cannot be guaranteed.
・This
product is intended to be used for a single operation (single-device operation). A proper operation is not
guaranteed for a parallel operation. A parallel operation should be performed in accordance with your own good
judgment.
・Mounting
method
・The
flatness of a heat sink must not exceed 50
μm.
If the flatness exceeds 50
μm,
the device may experience
an unexpected stress that may lead to module breakdown due to damage or ignition in the substrate inside a
module and other module parts.
・Please
apply thermal compound between a module and a heat sink to improve the adhesive property.
・Use
a 4-mm diameter screw with the clamping screw torque of 1.2 to 1.5 Nm.
・Please
solder the module leads after the screw is clamped.
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2007-10-01
S-AV40
EQUIVALENT CIRCUIT
①
Pi
Z
G
= 50
Ω
④
Po
Z
L
= 50
Ω
②
V
GG
③
V
DD
⑤GROUND
（Flange）
TEST FIXTURE
C1
C1
C2
C2
C1: 10000 pF
C2: 10
μF
L:
ϕ0.5-mm
enamel wire, 4T, 3ID
L
V
GG
V
DD
L
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2007-10-01
S-AV40
MARKING
TOSHIBA
Ｓ－ＡＶ４０
ＪＡＰＡＮ
Product Number
Alphanumeric characters: Date of manufacture
Dot: Indicates that this product is manufactured by “TOSHIBA
COMPONENTS.”
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: Last decimal digit of the year of manufacture
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2007-10-01
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