VS-85HF(R) Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 85 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Leaded version available
• Types up to 1600 V V
RRM
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-203AB (DO-5)
TYPICAL APPLICATIONS
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
85 A
DO-203AB (DO-5)
Single diode
• Battery chargers
• Converters
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
85HF(R)
10 to 120
85
T
C
50 Hz
60 Hz
50 Hz
60 Hz
Range
140
133
1700
1800
14 500
13 500
100 to 1200
-65 to +180
140 to 160
85
110
133
1700
1800
14 500
13 500
1400 to 1600
-65 to +150
UNITS
A
°C
A
A
A
2
s
V
°C
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
10
20
40
60
VS-85HF(R)
80
100
120
140
160
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
200
300
500
700
900
1100
1300
1500
1700
4.5
9
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 13-Nov-14
Document Number: 95802
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-85HF(R) Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Value of threshold voltage
(up to 1200 V)
Value of threshold voltage
(for 1400 V, 1600 V)
Value of forward slope resistance
(up to 1200 V)
Value of forward slope resistance
(for 1400 V, 1600 V)
Maximum forward voltage drop
I
2
t
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
85HF(R)
10 to 120
85
140
133
1700
1800
1450
Sinusoidal half wave,
initial T
J
= T
J
maximum
1500
14 500
13 500
10 500
9400
16 000
0.68
V
F(TO)
T
J
= T
J
maximum
0.69
1.62
r
f
V
FM
T
J
= T
J
maximum
1.75
I
pk
= 267 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
1.2
1.4
V
mW
V
A
2
s
A
2
s
A
110
140/160
UNITS
A
°C
A
t = 0.1 ms to 10 ms, no voltage reapplied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum shock
(1)
Maximum constant vibration
(1)
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
TEST CONDITIONS
85HF(R)
10 to 20
140 to 160
UNITS
°C
-65 to +180 -65 to +150
0.35
K/W
Mounting surface, smooth, flat and greased
0.25
1500
50 Hz
Stud outwards
Not lubricated thread, tighting on nut
Lubricated thread, tighting on nut
Not lubricated thread, tighting on hexagon
Lubricated thread, tighting on hexagon
20
5000
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
17
0.6
DO-203AB (DO-5)
g
oz.
N·m
(lbf · in)
g
Maximum constant acceleration
(1)
Maximum allowable mounting torque
+ 0 %, - 10 %
Approximate weight
Case style
Notes
(1)
Available only for 88HF
(2)
Recommended for pass-through holes
(3)
Recommended for holed threaded heatsinks
Unleaded device
See dimensions - link at the end of datasheet
Revision: 13-Nov-14
Document Number: 95802
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-85HF(R) Series
www.vishay.com
Vishay Semiconductors
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.10
0.11
0.13
0.17
0.26
RECTANGULAR CONDUCTION
0.08
0.11
0.13
0.17
0.26
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
1 80
Maximum Allowable Case
Temperature (°C)
85HF(R)
Series
100 V to 1200 V
R
thJC
(DC) = 0.35 K/W
150
85HF(R)
Series
(1400 V to 1600 V)
R
thJC
(DC) = 0.35 K/W
1 70
Conduction Angle
1 40
Conduction Angle
1 60
1 30
1 50
30°
1 40
60°
90°
120°
180°a
1 30
0
10
20
30
40
50
60
70
80
90
100
1 20
30°
1 10
60°
90°
120°
180°
1 00
0
10
20
30
40
50
60
70
80
90
100
I
F(AV)
- Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Case Temperature (°C)
180
Maximum Allowable Case
Temperature (°C)
85HF(R)
Series
100 V to 1200 V
R
thJC
(DC) = 0.35 K/W
150
85HF(R)
Series
(1400 V to 1600 V)
R
thJC
(DC) = 0.35 K/W
140
Conduction Period
170
Conduction Period
160
130
150
30°
140
60°
90°
120°
180°
130
0
20
40
60
80
100
120
140
DC
120
30°
110
60°
90°
120°
100
0
20
40
60
80
100
120
140
180°
DC
I
F(AV)
- Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 4 - Current Ratings Characteristics
Revision: 13-Nov-14
Document Number: 95802
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-85HF(R) Series
www.vishay.com
Vishay Semiconductors
180°
120°
90°
60°
30°
1
90
7
0.
h
S
Rt
Maximum Average Forward
Power Loss (W)
80
70
60
50
40
30
20
10
0
0
10
20
1.
2K
3K
W
K/
5
K/
K/
W
A
=0
W
/W
.5
K/
W
RMS Limit
aR
elt
-D
/W
Conduction Angle
5 K/
W
10 K/W
85HF(R)
Series
100 V to 1200 V
Tj = 180˚C
30
40
50
60
70
80
90
20
40
60
80 100 120 140 160 180
I
F(AV)
- Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
120
Maximum Average Forward
Power Loss (W)
100
80
DC
180°
120°
90°
60°
30°
0.
7
h
Rt
1
/W
K
W
K/
S
A
=
0.
1.5
5
K/
K/
W
W
2K
-D
/W
elt
60 RMS Limit
40
20
0
0
20
40
60
80
100
120
140
Conduction Period
85HF(R)
Series
100 V to 1200 V
Tj = 180˚C
a
3K
R
/W
5 K/W
10 K/W
20
40
60
80
100
120 140 160 180
I
F(AV)
- Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
100
90
80
70
60
50
40
30
20
10
0
0
10
20
180°
120°
90°
60°
30°
RMS Limit
0.
7
K/
W
R
th
1
1.5
W
K/
S
A
=
0.
5
K/
W
K/
W
2K
-D
/W
a
elt
R
3K
Conduction Angle
/W
5 K/W
85HF(R)
Series
(1400 V, 1600 V)
T
j
= 150 ˚C
30
40
50
60
70
80
10 K/W
90
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
Revision: 13-Nov-14
Document Number: 95802
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-85HF(R) Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
1 40
1 20
1 00
80
60
40
20
0
0
20
40
60
80
100
120
140
25
50
75
100
125
150
RMS Limit
Conduction Period
85HF(R)
Series
(1400 V, 1600 V)
Tj = 150 ˚C
DC
180°
120°
90°
60°
30°
R
th
K/
W
0.7
1K
S
A
=
5
0.
/W
K
-
ta
el
D
/W
1.5
K
/W
2 K/
W
R
3 K/W
5 K/W
10 K/W
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
Peak Half
Sine
Wave Forward Current (A)
1400
1200
1000
800
600
400
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following
Surge.
Initial Tj = Tj Max.
@ 60 Hz 0.0083
s
@ 50 Hz 0.0100
s
Instantaneous Forward Current (A)
1600
10 000
T
j
= 25°C
T
j
= T
j
Max.
1000
100
85HF(R)
Series
up to 1200 V
10
0
1
2
3
4
5
6
85HF(R)
Series
10
100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Voltage (V)
Fig. 11 - Forward Voltage Drop Characteristics
Peak Half
Sine
Wave Forward Current (A)
1600
1400
1200
1000
800
600
400
Maximum Non Repetitive
Surge
Current
Versus Pulse Train Duration.
Initial Tj = Tj Max.
No Voltage Reapplied
Rated Vrrm Reapplied
Instantaneous Forward Current (A)
1800
1000
T
j
= T
j
Max.
100
T
j
= 25 °C
10
88HF (R)
Series
1
0
0.5
1
1.5
2
2.5
85HF(R) Series
0.1
1
200
0.01
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Voltage (V)
Fig. 12 - Forward Voltage Drop Characteristics
Revision: 13-Nov-14
Document Number: 95802
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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