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© Nexperia B.V. (year). All rights reserved.
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74HC1GU04
Inverter
Rev. 05 — 10 July 2007
Product data sheet
1. General description
The 74HC1GU04 is a high-speed Si-gate CMOS device. It provides an inverting single
stage function. The standard output currents are half those of the 74HCU04.
2. Features
I
I
I
I
I
Symmetrical output impedance
Wide operating voltage range from 2.0 V to 6.0 V
Low power dissipation
Balanced propagation delays
SOT353-1 and SOT753 package options
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC1GU04GW
74HC1GU04GV
−40 °C
to +125
°C
−40 °C
to +125
°C
Name
TSSOP5
SC-74A
Description
plastic thin shrink small outline package;
5 leads; body width 1.25 mm
plastic surface-mounted package; 5 leads
Version
SOT353-1
SOT753
Type number
4. Marking
Table 2.
Marking codes
Marking
HD
HU4
Type number
74HC1GU04GW
74HC1GU04GV
5. Functional diagram
2
A
Y
4
2
1
mna044
4
A
Y
mna045
mna043
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram
NXP Semiconductors
74HC1GU04
Inverter
6. Pinning information
6.1 Pinning
74HC1GU04
n.c.
A
1
2
5
V
CC
GND
3
001aaf105
4
Y
Fig 4. Pin configuration
6.2 Pin description
Table 3.
Symbol
n.c.
A
GND
Y
V
CC
Pin description
Pin
1
2
3
4
5
Description
not connected
data input
ground (0 V)
data output
supply voltage
7. Functional description
Table 4.
Function table
H = HIGH voltage level; L = LOW voltage level
Input
A
L
H
Output
Y
H
L
74HC1GU04_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 10 July 2007
2 of 12
NXP Semiconductors
74HC1GU04
Inverter
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V
−0.5
V < V
O
< V
CC
+ 0.5 V
[1]
[1]
[1]
Min
−0.5
-
-
-
-
−25
−65
Max
+7.0
±20
±20
±12.5
25
-
+150
200
Unit
V
mA
mA
mA
mA
mA
°C
mW
T
amb
=
−40 °C
to +125
°C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Above 55
°C
the value of P
tot
derates linearity with 2.5 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
V
O
T
amb
∆t/∆V
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall
rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
Min
2.0
0
0
−40
-
-
-
Typ
5.0
-
-
+25
-
-
-
Max
6.0
V
CC
V
CC
+125
625
139
83
Unit
V
V
V
°C
ns/V
ns/V
ns/V
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
°
C.
Symbol
V
IH
Parameter
HIGH-level input
voltage
Conditions
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
−40 °C
to +85
°C
Min
1.7
3.6
4.8
-
-
-
Typ
1.4
2.6
3.4
0.6
1.9
2.6
Max
-
-
-
0.3
0.9
1.2
−40 °C
to +125
°C
Min
1.7
3.6
4.8
-
-
-
Max
-
-
-
0.3
0.9
1.2
V
V
V
V
V
V
Unit
74HC1GU04_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 10 July 2007
3 of 12
NXP Semiconductors
74HC1GU04
Inverter
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
°
C.
Symbol
V
OH
Parameter
HIGH-level output
voltage
Conditions
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 2.0 V
I
O
=
−20 µA;
V
CC
= 4.5 V
I
O
=
−20 µA;
V
CC
= 6.0 V
I
O
=
−2.0
mA; V
CC
= 4.5 V
I
O
=
−2.6
mA; V
CC
= 6.0 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 2.0 V
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 20
µA;
V
CC
= 6.0 V
I
O
= 2.0 mA; V
CC
= 4.5 V
I
O
= 2.6 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
input leakage current
supply current
input capacitance
V
I
= V
CC
or GND; V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
-
0
0
0
0.15
0.16
-
-
5
0.2
0.5
0.5
0.33
0.33
1.0
10
-
-
-
-
-
-
-
-
-
0.2
0.5
0.5
0.4
0.4
1.0
20
-
V
V
V
V
V
µA
µA
pF
1.8
4.0
5.5
4.13
5.63
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
1.8
4.0
5.5
3.7
5.2
-
-
-
-
-
V
V
V
V
V
−40 °C
to +85
°C
Min
Typ
Max
−40 °C
to +125
°C
Min
Max
Unit
11. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; t
r
= t
f
= 6.0 ns; For test circuit see
Figure 6.
All typical values are measured at T
amb
= 25
°
C.
Symbol Parameter
t
pd
Conditions
[1]
−40 °C
to +85
°C
Min
Typ
10
7
6
5
14
Max
90
18
15
-
-
−40 °C
to +125
°C
Unit
Min
-
-
-
-
-
Max
105
21
18
-
-
ns
ns
ns
ns
pF
propagation delay A to Y; see
Figure 5
V
CC
= 2.0 V; C
L
= 50 pF
V
CC
= 4.5 V; C
L
= 50 pF
V
CC
= 6.0 V; C
L
= 50 pF
V
CC
= 5.0 V; C
L
= 15 pF
-
-
-
-
[2]
C
PD
power dissipation V
I
= GND to V
CC
capacitance
t
pd
is the same as t
PLH
and t
PHL
.
C
PD
is used to determine the dynamic power dissipation P
D
(µW).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
-
[1]
[2]
74HC1GU04_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 10 July 2007
4 of 12
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