1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
NOTE:
6473 tbl 05
1. Refer to maximum overshoot/undershoot diagram below. The measured
voltage at device pin should not exceed half sinusoidal wave with 2V peak and
half period of 2ns.
(T
A
= +25°C, f = 1.0MHz)
Parameter
(1)
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
6
7
Unit
pF
pF
Maximum Overshoot/Undershoot
V
IH
+2V
2ns
V
IL
2ns
-2V
6473 drw 12
Input Capacitance
I/O Capacitance
NOTE:
6473 tbl 06
1. This parameter is guaranteed by device characterization, but not production tested.
DC Electrical Characteristics
(V
DD
= Min. to Max., Automotive Temperature Ranges)
IDT71T016SA
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Condition
V
DD
= Max., V
IN
= V
SS
to V
DD
V
DD
= Max.,
CS
= V
IH
, V
OUT
= V
SS
to V
DD
I
OL
= 1.0mA, V
DD
= Min.
I
OH
= -1.0mA, V
DD
= Min.
Min.
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
6473 tbl 07
___
___
2.4
DC Electrical Characteristics
(1,2)
(V
DD
= Min. to Max., V
LC
= 0.2V, V
HC
= V
DD
– 0.2V, Automotive Temperature Ranges)
71T016SA12
Param eter
Sym bol
1
I
CC
Dynamic Operating Current
CS
< V
LC
, Outputs Ope n, V
DD
= Max., f = f
M A X
(3)
Dynamic Standby Po we r Supply Current
CS
> V
HC
, Outputs Ope n, V
DD
= Max., f = f
M A X
(3)
Full Standby Power Supply Current (static)
CS
> V
HC
, Outputs Ope n, V
DD
= Max., f = 0
(3)
Max.
Typ.
(4)
110
85
45
5
2
100
85
45
5
3 and 4
90
85
35
5
1
100
80
35
5
2
90
80
35
5
3 and 4
80
80
30
5
1
90
80
30
5
2
80
80
30
5
3 and 4
80
Autom otive Grade
71T016SA15
Autom otive Grade
71T016SA20
Autom otive Grade
Unit
mA
80
30
5
mA
mA
I
SB
I
SB
1
NOTES:
643 7 tb l 8
1. All values are maximum guaranteed values.
2. All inputs switch between 0.2V (Low) and V
DD
– 0.2V (High).
3. f
MAX
= 1/t
RC
(all address inputs are cycling at f
MAX
); f = 0 means no address input lines are changing .
4. Typical values are measured at 2.5V, 25°C and with equal read and write cycles. This parameter is guaranteed by device characterization but is not production
tested.
6.42
3
IDT71T016SA, 2.5V CMOS Static RAM
for Automotive Applications 1 Meg (64K x 16-Bit)
Automotive Temperature Ranges
AC Test Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
0V to 2.5V
1.5ns
(V
DD
/2)
(V
DD
/2)
See Figure 1, 2 and 3
6473 tbl 09
2.5V
AC Test Loads
+1.25V
50
I/O
Z
0
=
50
30pF
6473 drw 03
320
DATA
OUT
5pF*
350
6473 drw 04
*Including jig and scope capacitance.
Figure 1. AC Test Load
Figure 2. AC Test Load
(for t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
OW,
and t
WHZ
)
7
6
t
AA,
t
ACS
(Typical, ns) 5
4
3
2
1
•
8 20 40 60 80 100 120 140 160 180 200
CAPACITANCE (pF)
Figure 3. Output Capacitive Derating
6473 drw 05
6.42
4
IDT71T016SA, 2.5V CMOS Static RAM
for Automotive Applications 1 Meg (64K x 16-Bit)
Automotive Temperature Ranges
AC Electrical Characteristics
Symbol
READ CYCLE
t
RC
t
AA
t
ACS
t
CLZ
(1,2)
t
CHZ
(1,2)
t
OE
t
OLZ
(1,2)
t
OHZ
(1,2)
t
OH
t
BE
t
BLZ
(1,2)
t
BHZ
(1,2)
t
PU
(3)
t
PD
(3)
WRITE CYCLE
t
WC
t
AW
t
CW
t
BW
t
AS
t
WR
t
WP
t
DW
t
DH
t
OW
(1,2)
t
WHZ
(1,2)
Write Cycle Time
Address Valid to End of Write
Chip Select Low to End of Write
Byte Enable Low to End of Write
Address Set-up Time
Address Hold from End of Write
Write Pulse Width
Data Valid to End of Write
Data Hold Time
Write Enable High to Output in Low-Z
Write Enable Low to Output in High-Z
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Low to Output in Low-Z
Chip Select High to Output in High-Z
Output Enable Low to Output Valid
Output Enable Low to Output in Low-Z
Output Enable High to Output in High-Z
Output Hold from Address Change
Byte Enable Low to Output Valid
Byte Enable Low to Output in Low-Z
Byte Enable High to Output in High-Z
Chip Select Low to Power Up
Chip Select High to Power Down
Parameter
(V
DD
= Min. to Max., Automotive Temperature Ranges)
71T016SA12
Min.
Max.
71T016SA15
Min.
Max.
71T016SA20
Min.
Max.
Unit
12
____
____
____
15
____
____
____
20
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
12
12
____
15
15
____
20
20
____
4
____
5
____
5
____
1
6
____
1
7
____
3
8
____
____
____
____
0
____
0
____
0
____
1
—
6
____
1
—
7
____
3
—
8
____
4
—
0
____
4
—
0
____
4
____
0
____
1
____
1
____
3
____
0
____
0
____
0
____
12
15
20
12
8
8
8
0
0
8
6
0
3
____
____
____
____
____
____
____
____
____
____
15
10
10
10
0
0
10
7
0
3
____
____
____
____
____
____
____
____
____
____
20
12
12
12
0
0
12
9
0
3
____
____
____
____
____
____
____
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6473 tbl 10
____
____
____
4
4
6
NOTES:
1. At any given temperature and voltage condition, tCHZ is less than tCLZ, tOHZ is less than tOLZ, and tWHZ is less than tOW for any given device.
2. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
3. This parameter is guaranteed by design and not production tested.
“tensymetry”这个词在《韦伯斯特词典》中没有解释，但在医学界却广为人知。由Tensys Medical Systems公司开发的tensymetry是一种使用生物机械、电气、软件工程的专有组合技术。利用这三种强大的技术，你可在手术室内对病人的心跳血压进行精确、连续、实时和非侵入性测量。 该技术结出的果实就是该公司的T-line Tensymeter产品。该产品线的最新进展是去年...[详细]
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