8-CHANNEL, SGL ENDED MULTIPLEXER, CQCC20, CERAMIC, LCC-20
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Renesas(瑞萨电子) |
| 零件包装代码 | QLCC |
| 包装说明 | QCCN, LCC20,.35SQ |
| 针数 | 20 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| Factory Lead Time | 21 weeks |
| Is Samacsys | N |
| 模拟集成电路 - 其他类型 | SINGLE-ENDED MULTIPLEXER |
| JESD-30 代码 | S-CQCC-N20 |
| JESD-609代码 | e0 |
| 长度 | 8.89 mm |
| 标称负供电电压 (Vsup) | -15 V |
| 信道数量 | 8 |
| 功能数量 | 1 |
| 端子数量 | 20 |
| 标称断态隔离度 | 50 dB |
| 通态电阻匹配规范 | 0.07 Ω |
| 最大通态电阻 (Ron) | 1000 Ω |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN |
| 封装等效代码 | LCC20,.35SQ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | +-15 V |
| 认证状态 | Qualified |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 2.2606 mm |
| 最大信号电流 | 0.001 A |
| 最大供电电流 (Isup) | 12 mA |
| 标称供电电压 (Vsup) | 15 V |
| 表面贴装 | YES |
| 最长断开时间 | 1000 ns |
| 最长接通时间 | 1000 ns |
| 切换 | BREAK-BEFORE-MAKE |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) - hot dipped |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 8.89 mm |
| Base Number Matches | 1 |
| 77052012A | HI3-0508-5Z | 5962-8513107XA | |
|---|---|---|---|
| 描述 | 8-CHANNEL, SGL ENDED MULTIPLEXER, CQCC20, CERAMIC, LCC-20 | 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16, LEAD FREE, PLASTIC, MS-001-BB, DIP-16 | 16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28, CERAMIC, DIP-28 |
| 是否无铅 | 含铅 | 不含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 符合 | 不符合 |
| 厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| 零件包装代码 | QLCC | DIP | DIP |
| 包装说明 | QCCN, LCC20,.35SQ | DIP, DIP16,.3 | DIP, DIP28,.6 |
| 针数 | 20 | 16 | 28 |
| Reach Compliance Code | not_compliant | compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| Factory Lead Time | 21 weeks | 11 weeks | 19 weeks |
| Is Samacsys | N | N | N |
| 模拟集成电路 - 其他类型 | SINGLE-ENDED MULTIPLEXER | SINGLE-ENDED MULTIPLEXER | SINGLE-ENDED MULTIPLEXER |
| JESD-30 代码 | S-CQCC-N20 | R-PDIP-T16 | R-GDIP-T28 |
| JESD-609代码 | e0 | e3 | e0 |
| 标称负供电电压 (Vsup) | -15 V | -15 V | -15 V |
| 信道数量 | 8 | 8 | 16 |
| 功能数量 | 1 | 1 | 1 |
| 端子数量 | 20 | 16 | 28 |
| 最大通态电阻 (Ron) | 1000 Ω | 400 Ω | 300 Ω |
| 最高工作温度 | 125 °C | 75 °C | 125 °C |
| 最低工作温度 | -55 °C | - | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED |
| 封装代码 | QCCN | DIP | DIP |
| 封装等效代码 | LCC20,.35SQ | DIP16,.3 | DIP28,.6 |
| 封装形状 | SQUARE | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | IN-LINE | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT APPLICABLE | NOT APPLICABLE |
| 电源 | +-15 V | +-15 V | +-15 V |
| 认证状态 | Qualified | Not Qualified | Not Qualified |
| 最大信号电流 | 0.001 A | 0.02 A | 0.02 A |
| 最大供电电流 (Isup) | 12 mA | 2.4 mA | 3 mA |
| 标称供电电压 (Vsup) | 15 V | 15 V | 15 V |
| 表面贴装 | YES | NO | NO |
| 最长断开时间 | 1000 ns | 1000 ns | 500 ns |
| 最长接通时间 | 1000 ns | 1000 ns | 500 ns |
| 切换 | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE |
| 技术 | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | COMMERCIAL EXTENDED | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) - hot dipped | Matte Tin (Sn) - annealed | Tin/Lead (Sn/Pb) - hot dipped |
| 端子形式 | NO LEAD | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 1.27 mm | 2.54 mm | 2.54 mm |
| 端子位置 | QUAD | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT APPLICABLE | NOT APPLICABLE |
| Base Number Matches | 1 | 1 | 1 |
| 长度 | 8.89 mm | 19.17 mm | - |
| 标称断态隔离度 | 50 dB | 68 dB | - |
| 通态电阻匹配规范 | 0.07 Ω | 9 Ω | - |
| 筛选级别 | MIL-STD-883 | - | MIL-STD-883 |
| 座面最大高度 | 2.2606 mm | 5.33 mm | - |
| 宽度 | 8.89 mm | 7.62 mm | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
