WE128K32-XXX
HI-RELIABILITY PRODUCT
128Kx32 EEPROM MODULE, SMD 5962-94585
FEATURES
s
Access Times of 120, 140, 150, 200, 250, 300ns
s
Packaging:
• 66-pin, PGA Type, 27.3mm (1.075") square, Hermetic
Ceramic HIP (Package 400)
• 68 lead, 40mm CQFP (G4), (Package 501)
• 68 lead, 22.4mm sq. CQFP (G2T), 4.57mm (0.180") high,
(Package 509)
• 68 lead, 22.4mm sq. Low Profile CQFP (G1U), 3.57mm
(0.140") high, (Package 519)
Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8
Write Endurance 10,000 Cycles
Data Retention Ten Years Minimum (at +25°C)
Commercial, Industrial and Military Temperature Ranges
Low Power CMOS
s
s
s
s
s
s
s
Automatic Page Write Operation
Page Write Cycle Time: 10ms Max
Data Polling for End of Write Detection
Hardware and Software Data Protection
TTL Compatible Inputs and Outputs
5 Volt Power Supply
Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
s
Weight
WE128K32-XG2TX - 8 grams typical
WE128K32-XG1UX - 5 grams typical
WE128K32-XH1X - 13 grams typical
WE128K32-XG4X - 20 grams typical
s
s
s
s
s
FIG. 1
PIN CONFIGURATION FOR WE128K32N-XH1X
TOP VIEW
PIN DESCRIPTION
34
I/O
15
I/O
14
I/O
13
I/O
12
OE
NC
WE
1
I/O
7
I/O
6
I/O
5
I/O
4
33
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
44
V
CC
CS
4
WE
4
I/O
27
A
3
A
4
A
5
WE
3
CS
3
GND
I/O
19
55
45
I/O
31
I/O
30
I/O
29
56
1
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
NC
I/O
0
I/O
1
I/O
2
11
12
WE
2
CS
2
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
NC
I/O
3
22
23
I/O
0-31
Data Inputs/Outputs
A
0-16
WE
1-4
CS
1-4
OE
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
I/O
28
A
0
A
1
A
2
I/O
23
OE
WE
1
CS
1
A
0-16
128K x 8
V
CC
GND
NC
BLOCK DIAGRAM
WE
2
CS
2
WE
3
CS
3
WE
4
CS
4
I/O
22
I/O
21
I/O
20
128K x 8
128K x 8
128K x 8
8
8
8
8
66
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
Nov 2000 Rev. 4
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WE128K32-XXX
FIG. 2
PIN CONFIGURATION FOR WE128K32-XG4X
TOP VIEW
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
1
GND
CS
3
WE
A
6
A
7
A
8
A
9
A
10
V
CC
PIN DESCRIPTION
I/O
0-31
Data Inputs/Outputs
A
0-16
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
8
8
8
WE
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
CS
1-4
OE
V
CC
GND
NC
BLOCK DIAGRAM
CS
1
WE
OE
A
0
-
16
128K x 8
128K x 8
CS
2
CS
3
CS
4
128K x 8
128K x 8
8
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
2
OE
CS
4
NC
NC
NC
NC
NC
NC
NC
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
FIG. 3
PIN CONFIGURATION FOR WE128K32-XG2TX AND WE128K32-XG1UX
TOP VIEW
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
GND
CS
4
WE
1
A
6
A
7
A
8
A
9
A
10
V
CC
PIN DESCRIPTION
I/O
0-31
Data Inputs/Outputs
A
0-16
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
CS
1
CS
2
NC
WE
2
WE
3
WE
4
V
CC
OE
A
11
A
12
A
13
A
14
A
15
A
16
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
NC
NC
NC
WE
1-4
CS
1-4
OE
0.940"
V
CC
GND
The White 68 lead G2T/G1U
NC
Not Connected
CQFP fills the same fit and
function as the JEDEC 68 lead
CQFJ or 68 PLCC. But the G2T/
G1U has the TCE and lead
BLOCK DIAGRAM
inspection advantage of the
WE CS
WE CS
WE CS
WE CS
CQFP form.
1
1
2
2
3
3
4
4
OE
A
0-16
128K x 8
128K x 8
128K x 8
128K x 8
8
8
8
8
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
2
WE128K32-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Voltage on OE and A9
Symbol
T
A
T
STG
V
G
-55 to +125
-65 to +150
-0.6 to +6.25
-0.6 to +13.5
Unit
°C
°C
V
V
CS
H
L
L
X
X
X
OE
X
L
H
H
X
L
TRUTH TABLE
WE
X
H
L
X
H
X
Mode
Standby
Read
Write
Out Disable
Write
Inhibit
Data I/O
High Z
Data Out
Data In
High Z/Data Out
NOTE:
Stresses above those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect
device reliability.
CAPACITANCE
(T
A
= +25°C)
Parameter
OE capacitance
WE
1-4
capacitance
HIP (PGA)
CQFP G4
CQFP G2T/G1U
CS
1-4
capacitance
Data I/O capacitance
Address input capacitance
Symbol
C
OE
C
WE
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
20
50
20
C
CS
C
I/O
C
AD
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
20
20
50
pF
pF
pF
Max
50
Unit
pF
pF
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
Symbol
V
CC
V
IH
V
IL
T
A
T
A
Min
4.5
2.0
-0.5
-55
-40
Max
5.5
V
CC
+ 0.3
+0.8
+125
+85
Unit
V
V
V
°C
°C
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current x 32 Mode
Standby Current
Output Low Voltage
Symbol
I
LI
I
LOx32
I
CCx32
I
SB
V
OL
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz
CS = V
IH
, OE = V
IH
, f = 5MHz
I
OL
= 2.1mA, V
CC
= 4.5V
2.4
Min
Max
10
10
250
2.5
0.45
Unit
µA
µA
mA
mA
V
V
Output High Voltage
V
OH
I
OH
= -400µA, V
CC
= 4.5V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
FIG. 4
AC TEST CIRCUIT
Current Source
I
OL
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
D.U.T.
C
eff
= 50 pf
V
Z
≈
1.5V
Output Timing Reference Level
(Bipolar Supply)
I
OH
Current Source
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WE128K32-XXX
AC WRITE CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Write Cycle Parameter
Write Cycle Time, TYP = 6ms
Address Set-up Time
Write Pulse Width (WE or CS)
Chip Select Set-up Time
Address Hold Time
Data Hold Time
Chip Select Hold Time
Data Set-up Time
Output Enable Set-up Time
Output Enable Hold Time
Write Pulse Width High
Symbol
t
WC
t
AS
t
WP
t
CS
t
AH
t
DH
t
CSH
t
DS
t
OES
t
OEH
t
WPH
0
150
0
100
10
0
100
10
10
50
Min
Max
10
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE
A write cycle is initiated when OE is high and a low pulse is on WE
or CS with CS or WE low. The address is latched on the falling
edge of CS or WE whichever occurs last. The data is latched by
the rising edge of CS or WE, whichever occurs first. A byte write
operation will automatically continue to completion.
WRITE CYCLE TIMING
Figures 5 and 6 show the write cycle timing relationships. A
write cycle begins with address application, write enable and
chip select. Chip select is accomplished by placing the CS line
low. Write enable consists of setting the WE line low. The
write cycle begins when the last of either CS or WE goes low.
The WE line transition from high to low also initiates an
internal 150
µsec
delay timer to permit page mode operation.
Each subsequent WE transition from high to low that occurs
before the completion of the 150
µsec
time out will restart the
timer from zero. The operation of the timer is the same as a
retriggerable one-shot.
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
4
WE128K32-XXX
FIG. 5
WRITE WAVEFORMS
WE CONTROLLED
t
WC
OE
t
OES
ADDRESS
t
AS
CS
1-4
t
CS
WE
1-4
t
WP
t
DS
DATA IN
t
WPH
t
DH
t
AH
t
CSH
t
OEH
FIG. 6
WRITE WAVEFORMS
CS CONTROLLED
t
WC
OE
t
OES
ADDRESS
t
AS
WE
1 - 4
t
CS
CS
1 - 4
t
WP
t
DS
DATA IN
t
WPH
t
DH
t
AH
t
CSH
t
OEH
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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