2SK3689-01
FUJI POWER MOSFET
200311
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
Maximum avalanche current
Non-Repetitive
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol Ratings
V
DS
600
V
DSX
600
I
D
±16
I
D(puls]
±64
V
GS
±30
I
AS
16
E
AS
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
242.7
20
5
2.50
235
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
kV/s
kV/µs
W
°C
°C
Remarks
V
GS
=-30V
Tch<150°C
=
L=1.74mH
V
CC
=60V *1
VDS< 600V
=
*2
Ta=25°C
Tc=25°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*1 See to Avalanche Energy Graph
*2 I
F
< -I
D
, -di/dt=50A/µs, V
CC
< BV
DSS
, Tch < 150°C
=
=
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=600V V
GS
=0V
T
ch
=25°C
V
DS
=480V V
GS
=0V
T
ch
=125°C
V
GS
=±30V V
DS
=0V
I
D
=8A V
GS
=10V
I
D
=8A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=8A
V
GS
=10V
R
GS
=10
Ω
V
CC
=300V
I
D
=16A
V
GS
=10V
L=1.74mH T
ch
=25°C
I
F
=16A V
GS
=0V T
ch
=25°C
I
F
=16A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Test Conditions
channel to case
channel to ambient
Min.
600
3.0
Typ.
Max.
5.0
25
250
100
0.57
Units
V
V
µA
nA
Ω
S
pF
10
0.42
6.5
13
1590
2390
200
300
8
12
29
43.5
16
24
58
87
8
12
34
51
12
18
10
15
16
1.00
1.50
0.68
7.8
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Min.
Typ.
Max.
0.532
50.0
Units
°C/W
°C/W
1
2SK3689-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
400
50
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
40
300
PD [W]
200
ID [A]
30
20V
10V
8V
7V
20
6.5V
100
10
VGS=6.0V
0
0
25
50
75
100
125
150
0
0
4
8
12
16
20
24
Tc [
°
C]
VDS [V]
100
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
100
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
10
10
ID[A]
1
1
0.1
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
gfs [S]
1
10
100
VGS[V]
ID [A]
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
VGS=6V
6.5V
1.5
1.4
1.3
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8A,VGS=10V
7V
8V
10V
20V
1.2
1.1
RDS(on) [
Ω
]
RDS(on) [
Ω
]
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
typ.
max.
0
10
20
30
0.0
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3689-01
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
5.0
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=16A,Tch=25
°
C
12
Vcc= 120V
max.
10
480V
300V
VGS(th) [V]
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
VGS [V]
4.0
8
6
4
2
0
0
10
20
30
40
50
60
Tch [
°
C]
Qg [nC]
10
4
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
Ciss
10
3
10
C [pF]
10
2
Coss
IF [A]
1
10
3
10
1
Crss
10
0
10
0
10
1
10
2
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
Ω
700
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A
600
I
AS
=7A
500
10
2
td(off)
td(on)
EAV [mJ]
400
I
AS
=10A
t [ns]
300
I
AS
=16A
200
10
1
tr
tf
100
10
0
10
-1
10
0
10
1
10
2
0
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
2SK3689-01
FUJI POWER MOSFET
10
Maximum Avalanche Current Pulsewidth
I =f(t
AV
):starting Tch=25
°
C,Vcc=50V
2
AV
Avalanche Current I
AV
[A]
Single Pulse
1
10
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
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