BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Rev. 04 — 23 November 2007
Product data sheet
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NXP Semiconductors
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
PINNING
PIN
1
2
3
4
1
2
3
4
1
2
3
4
BFG520; BFG520/X; BFG520/XR
DESCRIPTION
collector
base
emitter
emitter
fpage
4
3
BFG520 (Fig.1) Code:
%MF
1
Top view
2
MSB014
BFG520/X (Fig.1) Code:
%ML
collector
emitter
base
emitter
collector
emitter
base
emitter
Fig.1 SOT143B.
handbook, 2 columns
3
4
BFG520/XR (Fig.2) Code:
%MP
2
Top view
1
MSB035
Fig.2 SOT143R.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
c
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
up to T
s
= 88
°C;
note 1
I
C
= 20 mA; V
CE
= 6 V; T
j
= 25
°C
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
°C
I
C
= 20 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
°C
S
21
2
F
insertion power gain
noise figure
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
c
= 5 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 20 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
f = 2 GHz; T
amb
= 25
°C
collector-emitter voltage open base
CONDITIONS
open emitter
−
−
−
−
60
−
−
−
−
17
−
−
−
MIN.
−
−
−
−
120
0.3
9
19
13
18
1.1
1.6
1.9
TYP.
MAX.
20
15
70
300
250
−
−
−
−
−
1.6
2.1
−
pF
GHz
dB
dB
dB
dB
dB
dB
UNIT
V
V
mA
mW
Rev. 04 - 23 November 2007
2 of 14
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
BFG520; BFG520/X; BFG520/XR
CONDITIONS
open emitter
open base
open collector
up to T
s
= 88
°C;
note 1
−
−
−
−
−
MIN.
MAX.
20
15
2.5
70
300
150
175
V
V
V
UNIT
mA
mW
°C
°C
−65
−
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 88
°C;
note 1
THERMAL RESISTANCE
290 K/W
Rev. 04 - 23 November 2007
3 of 14
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain (note 1)
BFG520; BFG520/X; BFG520/XR
CONDITIONS
I
E
= 0; V
CB
= 6 V
I
C
= 20 mA; V
CE
= 6 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
°C
I
C
= 20 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
°C
MIN.
−
60
−
−
−
−
−
−
17
−
−
−
−
−
−
−
−
TYP.
120
1
0.6
0.3
9
19
13
18
1.1
1.6
1.9
17
26
275
−50
MAX.
50
250
−
−
−
−
−
−
−
1.6
2.1
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
dB
S
21
2
F
insertion power gain
noise figure
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 20 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz; T
amb
= 25
°C
P
L1
ITO
V
o
d
2
Notes
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
Ω;
f = 900 MHz; T
amb
= 25
°C
note 2
note 3
I
C
= 20 mA; V
CE
= 6 V; V
o
= 75 mV;
T
amb
= 25
°C;
f
(p+q)
= 810 MHz
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2
S
21
-
G
UM
=
10 log
-------------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2. I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
Ω;
f = 900 MHz; T
amb
= 25
°C;
f
p
= 900 MHz; f
q
= 902 MHz;
measured at f
(2p−q)
= 898 MHz and f
(2q−p)
= 904 MHz.
3. d
im
=
−60
dB (DIN 45004B);
V
p
= V
o
; V
q
= V
o
−6
dB; V
r
= V
o
−6
dB;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz;
measured at f
(p+q−r)
= 793.25 MHz
Rev. 04 - 23 November 2007
4 of 14
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
handbook, halfpage
400
MRA670-1
handbook, halfpage
250
MRA671
Ptot
(mW)
300
hFE
200
150
200
100
100
50
0
0
50
100
150
Ts (oC)
200
0
10
−2
10
−1
1
10
IC (mA)
10
2
V
CE
= 6 V; T
j
= 25
°C.
Fig.3 Power derating curve.
Fig.4
DC current gain as a function of collector
current.
handbook, halfpage
0.6
MRA672
handbook, halfpage
12
MRA673
Cre
(pF)
0.4
fT
(GHz)
8
VCE = 6 V
VCE = 3 V
0.2
4
0
0
4
8
VCB (V)
12
0
10
−1
1
10
IC (mA)
10
2
I
C
= 0; f = 1 MHz.
f = 1 GHz; T
amb
= 25
°C.
Fig.5
Feedback capacitance as a function of
collector-base voltage.
Fig.6
Transition frequency as a function of
collector current.
Rev. 04 - 23 November 2007
5 of 14
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