BFG505; BFG505/X
NPN 9 GHz wideband transistors
Rev. 04 — 22 November 2007
Product data sheet
IMPORTANT NOTICE
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NXP Semiconductors
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar detectors, pagers and
satellite TV tuners (SATV).
PINNING
DESCRIPTION
PIN
BFG505
1
2
3
4
collector
base
emitter
emitter
BFG505/X
collector
emitter
base
emitter
handbook, 2 columns
4
3
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
1
2
MSB014
MARKING
TYPE NUMBER
BFG505
BFG505/X
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
T
s
≤
130
°C
V
CE
= 6 V; I
C
= 5 mA
V
CB
= 6 V; I
C
= i
c
= 0; f = 1 MHz
V
CE
= 6 V; I
C
= 5 mA; f = 1 GHz
V
CE
= 6 V; I
C
= 5 mA;
T
amb
= 25
°C;
f = 900 MHz
V
CE
= 6 V; I
C
= 5 mA;
T
amb
= 25
°C;
f = 2 GHz
S
21
2
F
insertion power gain
noise figure
V
CE
= 6 V; I
c
= 5 mA;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; V
CE
= 6 V; I
c
= 1.25 mA;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; V
CE
= 6 V; I
c
= 5 mA;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; V
CE
= 6 V; I
c
= 1.25 mA;
T
amb
= 25
°C;
f = 2 GHz
collector-emitter voltage R
BE
= 0
CONDITIONS
open emitter
CODE
%ME
%MK
Top view
Fig.1 Simplified outline SOT143B.
MIN.
−
−
−
−
60
−
−
−
−
16
−
−
−
−
−
−
−
TYP.
MAX.
20
15
18
150
250
−
−
−
−
−
1.7
2.1
−
UNIT
V
V
mA
mW
pF
GHz
dB
dB
dB
dB
dB
dB
120
0.2
9
20
13
17
1.2
1.6
1.9
Rev. 04 - 22 November 2007
2 of 13
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
thermal resistance from junction to soldering point
note 1
CONDITIONS
VALUE
290
UNIT
K/W
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
T
s
≤
130
°C;
see Fig.2; note 1
R
BE
= 0
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
MAX.
20
15
2.5
18
150
150
175
V
V
V
mA
mW
°C
°C
UNIT
handbook, halfpage
200
MRA638-1
Ptot
(mW)
150
100
50
0
0
50
100
150
Ts (°C)
200
Fig.2 Power derating curve.
Rev. 04 - 22 November 2007
3 of 13
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain; note 1
CONDITIONS
V
CB
= 6 V; I
E
= 0
I
C
= 5 mA; V
CE
= 6 V; see Fig.3
I
C
= i
c
= 0 V
EB
= 0.5 V; f = 1 MHz
V
CB
= 6 V; I
E
= i
e
= 0; f = 1 MHz
I
C
= 0; V
CB
= 6 V; f = 1 MHz; see Fig.4
I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz;
see Fig.5
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
I
c
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
S
21
2
F
insertion power gain
noise figure
I
c
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
P
L1
ITO
Notes
output power at 1 dB gain
compression
third order intercept point
I
C
= 5 mA; V
CE
= 6 V; R
L
= 50
Ω;
T
amb
= 25
°C;
f = 900 MHz
note 2
−
60
−
−
−
−
−
−
16
−
−
−
−
−
MIN.
−
120
0.4
0.3
0.2
9
20
13
17
1.2
1.6
1.9
4
10
TYP.
MAX.
50
250
−
−
−
−
−
−
−
1.7
2.1
−
−
−
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
UNIT
nA
S
21 2
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
=
10 log
--------------------------------------------------------------
dB.
(
1
–
S
11 2
) (
1
–
S
22 2
)
2. V
CE
= 6 V; I
C
= 5 mA; R
L
= 50
Ω;
T
amb
= 25
°C;
f
p
= 900 MHz; f
q
= 902 MHz;
measured at 2f
p
−
f
q
= 898 MHz and 2f
q
−
f
p
= 904 MHz.
Rev. 04 - 22 November 2007
4 of 13
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, halfpage
250
MRA639
handbook, halfpage
0.4
MRA640
hFE
200
Cre
(pF)
0.3
150
0.2
100
0.1
50
0
10
−3
10
−2
10
−1
1
10
10
2
IC (mA)
0
0
2
4
6
8
10
VCB (V)
V
CE
= 6 V.
I
C
= 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector
current.
Fig.4
Feedback capacitance as a function of
collector-base voltage.
handbook, halfpage
12
MRA641
handbook, halfpage
25
MRA642
fT
(GHz)
8
VCE = 6 V
VCE = 3 V
gain
(dB)
20
GUM
MSG
15
10
4
5
0
10
−1
1
10
IC (mA)
10
2
0
0
4
8
IC (mA)
V
CE
= 6 V; f = 900 MHz.
G
UM
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
12
T
amb
= 25
°C;
f = 1 GHz.
Fig.5
Transition frequency as a function of
collector current.
Fig.6 Gain as a function of collector current.
Rev. 04 - 22 November 2007
5 of 13
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