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5962-8751303XC

产品描述4KX1 STANDARD SRAM, 45ns, CDFP18, FP-18
产品类别存储   
文件大小244KB,共9页
制造商ST(意法半导体)
官网地址http://www.st.com/
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5962-8751303XC概述

4KX1 STANDARD SRAM, 45ns, CDFP18, FP-18

5962-8751303XC规格参数

参数名称属性值
厂商名称ST(意法半导体)
零件包装代码DFP
包装说明DFP,
针数18
Reach Compliance Codeunknown
ECCN代码3A001.A.2.C
Is SamacsysN
最长访问时间45 ns
JESD-30 代码R-CDFP-F18
JESD-609代码e4
长度10.973 mm
内存密度4096 bit
内存集成电路类型STANDARD SRAM
内存宽度1
功能数量1
端口数量1
端子数量18
字数4096 words
字数代码4000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织4KX1
输出特性3-STATE
可输出NO
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DFP
封装形状RECTANGULAR
封装形式FLATPACK
并行/串行PARALLEL
认证状态Not Qualified
座面最大高度2.235 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子面层GOLD
端子形式FLAT
端子节距1.194 mm
端子位置DUAL
Base Number Matches1

5962-8751303XC相似产品对比

5962-8751303XC 5962-8751301XC IMS1203S-25M 5962-8751301VC 5962-8751302XC 5962-8751303VC 5962-8751302VC IMS1203A-45M IMS1203A-25M IMS1203S-45M
描述 4KX1 STANDARD SRAM, 45ns, CDFP18, FP-18 4KX1 STANDARD SRAM, 25ns, CDFP18, FP-18 4KX1 STANDARD SRAM, 25ns, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18 4KX1 STANDARD SRAM, 25ns, CDIP18, 0.300 INCH, CERAMIC, DIP-18 4KX1 STANDARD SRAM, 35ns, CDFP18, FP-18 4KX1 STANDARD SRAM, 45ns, CDIP18, 0.300 INCH, CERAMIC, DIP-18 4KX1 STANDARD SRAM, 35ns, CDIP18, 0.300 INCH, CERAMIC, DIP-18 4KX1 STANDARD SRAM, 45ns, DFP18, FORMED, FP-18 4KX1 STANDARD SRAM, 25ns, DFP18, FORMED, FP-18 4KX1 STANDARD SRAM, 45ns, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18
零件包装代码 DFP DFP DIP DIP DFP DIP DIP DFP DFP DIP
包装说明 DFP, DFP, DIP, DIP18,.3 DIP, DFP, DIP, DIP, FORMED, FP-18 FORMED, FP-18 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18
针数 18 18 18 18 18 18 18 18 18 18
Reach Compliance Code unknown unknown not_compliant unknown unknown unknown unknown not_compliant _compli not_compliant
ECCN代码 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
最长访问时间 45 ns 25 ns 25 ns 25 ns 35 ns 45 ns 35 ns 45 ns 25 ns 45 ns
JESD-30 代码 R-CDFP-F18 R-CDFP-F18 R-CDIP-T18 R-CDIP-T18 R-CDFP-F18 R-CDIP-T18 R-CDIP-T18 R-XDFP-F18 R-XDFP-F18 R-CDIP-T18
JESD-609代码 e4 e4 e0 e4 e4 e4 e4 e0 e0 e0
长度 10.973 mm 10.973 mm 22.86 mm 22.86 mm 10.973 mm 22.86 mm 22.86 mm 10.973 mm 10.973 mm 22.86 mm
内存密度 4096 bit 4096 bit 4096 bit 4096 bit 4096 bit 4096 bit 4096 bit 4096 bit 4096 bi 4096 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 1 1 1 1 1 1 1 1 1 1
功能数量 1 1 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1 1 1
端子数量 18 18 18 18 18 18 18 18 18 18
字数 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words
字数代码 4000 4000 4000 4000 4000 4000 4000 4000 4000 4000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
组织 4KX1 4KX1 4KX1 4KX1 4KX1 4KX1 4KX1 4KX1 4KX1 4KX1
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
可输出 NO NO NO NO NO NO NO NO NO NO
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
封装代码 DFP DFP DIP DIP DFP DIP DIP DFP DFP DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK FLATPACK IN-LINE IN-LINE FLATPACK IN-LINE IN-LINE FLATPACK FLATPACK IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES NO NO YES NO NO YES YES NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
端子面层 GOLD GOLD Tin/Lead (Sn/Pb) GOLD GOLD GOLD GOLD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 FLAT FLAT THROUGH-HOLE THROUGH-HOLE FLAT THROUGH-HOLE THROUGH-HOLE FLAT FLAT THROUGH-HOLE
端子节距 1.194 mm 1.194 mm 2.54 mm 2.54 mm 1.194 mm 2.54 mm 2.54 mm 1.194 mm 1.194 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
厂商名称 ST(意法半导体) - ST(意法半导体) - ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体)
Base Number Matches 1 1 1 1 1 1 1 - - -

 
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