Ordering number : EN7712A
2SJ655
SANYO Semiconductors
DATA SHEET
2SJ655
Features
•
•
•
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
--100
±20
--12
--48
2.0
25
150
--55 to +150
144
--12
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Note :
*1
VDD=--50V, L=1mH, IAV=--12A
*2
L≤1mH, Single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=--1mA, VGS=0V
VDS=-
-100V, VGS=0V
VGS=
±16V,
VDS=0V
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=-
-6A
ID=--6A, VGS=-
-10V
ID=--6A, VGS=-
-4V
Ratings
min
--100
--1
±10
--1.2
9
13
100
136
136
190
--2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Marking : J655
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72506 MS IM TC-00000066 / 61504QB TS IM TA-3854 No.7712-1/5
2SJ655
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=-
-10V, ID=--12A
VDS=--50V, VGS=-
-10V, ID=--12A
VDS=--50V, VGS=-
-10V, ID=--12A
IS=--12A, VGS=0V
Ratings
min
typ
2090
155
108
17
95
187
95
41
7
9
--0.88
--1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7508-003
Switching Time Test Circuit
VIN
VDD= --50V
10.0
3.2
3.5
7.2
4.5
2.8
0V
--10V
VIN
ID= --6A
RL=8.33Ω
D
16.0
PW=10µs
D.C.≤1%
VOUT
18.1
G
1.6
1.2
0.75
14.0
0.7
5.6
2SJ655
P.G
50Ω
S
1 2 3
2.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
2.55
2.55
Avalanche Resistance Test Circuit
L
≥50Ω
RG
2SJ655
0V
--10V
50Ω
VDD
No.7712-2/5
2SJ655
--25
ID -- VDS
--1
0V
Tc= -
-25
°
C
--3.5
--20
--8
V
V
--4
--20
--6
V
Drain Current, ID -- A
--15
Drain Current, ID -- A
--15
--10
--10
--5
--5
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
--5.0
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--25
°
C
25
°
C
Tc=
7
VGS= --3V
5
°
C
--3.0
25
°
C
--4.0
75
°
C
--4.5
Tc=25
°C
--25
ID -- VGS
VDS= --10V
--5.0
Drain-to-Source Voltage, VDS -- V
300
IT05374
250
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT05375
RDS(on) -- Tc
ID= --6V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
200
200
150
150
Tc=75
°C
-4
V
=-
S
, VG
10V
6A
= --
--
=
S
ID
, VG
6A
--
I D=
100
25°C
100
--25
°C
50
50
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
0
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
100
y
fs -- ID
IT05376
--100
7
5
3
2
Case Temperature, Tc --
°C
IT05377
IS -- VSD
VGS=0V
Forward Transfer Admittance,
y
fs -- S
7
5
VDS= --10V
2
10
7
5
3
2
1.0
7
5
--0.1
Source Current, IS -- A
3
--10
7
5
3
2
C
75
°
--0.1
7
5
3
2
2
3
5
7 --1.0
2
3
5
Drain Current, ID -- A
1000
7
7 --10
2
IT05378
--0.01
7
5
3
2
--0.001
--0.3
Tc
=
C
25
°
--
Tc=
--1.0
7
5
3
2
--0.6
--25
°
C
--0.9
C
25
°
75
°
C
25
°
C
--1.2
IT05379
SW Time -- ID
VDD= --50V
VGS= --10V
td(off)
5
3
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5
3
2
Ciss
2
Ciss, Coss, Crss -- pF
1000
7
5
3
2
100
7
5
3
2
tf
tr
Coss
Crss
td(on)
100
7
0
10
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
--5
--10
--15
--20
--25
--30
IT05381
Drain Current, ID -- A
IT05380
Drain-to-Source Voltage, VDS -- V
No.7712-3/5
2SJ655
--10
--9
VGS -- Qg
VDS= --50V
ID= --12A
Drain Current, ID -- A
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
ASO
IDP= --48A
<10µs
10
10
µ
s
0
µ
s
Gate-to-Source Voltage, VGS -- V
--8
--7
--6
--5
--4
--3
--2
--1
0
0
5
10
15
20
25
30
35
40
45
ID= --12A
1m
10
s
10
m
0m
s
s
DC
Operation in this area
is limited by RDS(on).
op
era
t
ion
--0.1
--1.0
Tc=25°C
Single pulse
2
3
5
7 --10
2
3
5
Total Gate Charge, Qg -- nC
2.5
IT05382
35
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS --
7 --100
2
V
IT05383
PD -- Tc
Allowable Power Dissipation, PD -- W
30
2.0
25
1.5
20
1.0
15
10
0.5
5
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
120
IT05384
Case Temperature, Tc --
°C
IT05385
EAS -- Ta
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta --
°C
No.7712-4/5
2SJ655
Note on usage : Since the 2SJ655 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2006. Specifications and information herein are subject
to change without notice.
PS No.7712-5/5
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