Chip Schottky Barrier Diodes
FM723-NS
Surface mount small signal type
Features
Extremely thin package
Low stored charge
Majority carrier conduction
0.014(0.35)
0.010(0.25)
Formosa MS
SOD-323S
0.106(2.70)
0.091(2.30)
0.008(0.20)Typ.
0.057(1.45)
0.041(1.05)
0.083(2.10)
0.067(1.70)
Mechanical data
Case : Molded plastic, SOD-323-S
Terminals : Solder plated, solderable per MIL_STD_750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0001482 ounce, 0.0042 gram
0.005(0.12)
0.003(0.08)
0.031(0.80)
0.024(0.60)
Dimensions in inches and (millimeters)
Marking Code : 4
MAXIMUM RATINGS
(AT T
A
=25 C unless otherwise noted)
PARAMETER
Repetitive peak reverse voltage
Mean rectifying current
8.3ms single half sine-wave superimposed
on rate load (JEDEC methode)
Capacitance between terminals
Storage temperature
Operating temperature
f=1MHz and applied 10VDC reverse voltage
CONDITIONS
Symbol
V
RM
I
O
I
FSM
MIN.
TYP.
MAX.
30
200
UNIT
V
mA
o
Forward surge current
1500
mA
C
T
T
J
T
STG
-40
-40
20
+125
+125
pF
o
C
C
o
ELECTRICAL CHARACTERISTICS
(AT T
A
=25 C unless otherwise noted)
PARAMETER
Forward voltage
Reverse current
I
F
= 200 mA DC
V
R
= 30 V
CONDITIONS
Symbol
V
F
I
R
MIN.
TYP.
MAX.
0.60
15
UNIT
V
uA
o
RATING AND CHARACTERISTIC CURVES (FM723-NS)
Fig. 1 Forward characteristics
1000
REVERSE CURRENT : (A)
Fig. 2 Reverse characteristics
10m
125 C
O
FORWARD CURRENT : (mA)
1m
75 C
O
100
100
10
25 C
O
5C
12
75
O
C
O
C
10
O
25
O
1
25
C
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
0
10
20
30
40
FORWARD VOLTAGE : (V)
REVERSE VOLTAGE : (V)
FIG.3-TYPICAL TERMINALS CAPACITANCE
CAPACITANCE BETWEEN TERMINALS : (pF)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
100
100
Io CURRENT (%)
5
10
15
20
25
30
35
REVERSE VOLTAGE : V
80
60
40
20
0
0
10
1
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta
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