2SK3502-01MR
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET
200303
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol
Ratings
Unit
V
V
DS
600
A
I
D
±12
A
I
D(puls]
±48
V
V
GS
±30
A
I
AR *2
12
mJ
E
AS *1
183
kV/µs
dV
DS
/dt
*4
20
kV/µs
dV/dt
*3
5
°C
P
D
Ta=25
2.16
W
°C
Tc=25
70
Operating and storage
T
ch
+150
°C
-55 to +150
temperature range
T
stg
°C
Isolation Voltage
V
ISO
*5
2
kVrms
<150°C
*1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch =
*3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C *4 VDS < 600V *5 t=60sec, f=60Hz
=
=
=
=
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
T
ch
=25°C
V
DS
=600V V
GS
=0V
T
ch
=125°C
V
DS
=480V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=5A V
GS
=10V
I
D
=5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=250V
I
D
=10A
V
GS
=10V
L=2.33mH T
ch
=25°C
I
F
=10A V
GS
=0V T
ch
=25°C
I
F
=10A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
600
3.0
Typ.
Max.
5.0
25
250
100
0.75
Units
V
V
µA
nA
Ω
S
pF
4
10
0.58
8
1200
1800
140
210
6
9
17
26
15
23
35
53
7
11
30
45
11
16.5
10
15
1.00
0.75
5.0
ns
nC
12
1.50
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.79
58.0
Units
°C/W
°C/W
1
2SK3502-01MR
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
100
500
450
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=60V
80
400
350
I
AS
=5A
60
300
E
AS
[mJ]
0
25
50
75
100
125
150
PD [W]
250 I
AS
=8A
200
150 I
AS
=12A
40
20
100
50
0
0
0
25
50
75
100
125
150
Tc [
°
C]
starting Tch [
°
C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
22
20
18
10
16
14
20V
10V
8V
7.5V
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID [A]
12
7.0V
10
8
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26
VGS=6.5V
ID[A]
1
0.1
0
1
2
3
4
5
6
7
8
9
10
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
2.0
VGS=6.5V
7.0V
1.5
RDS(on) [
Ω
]
10
gfs [S]
1.0
7.5V8V 10V
20V
1
0.5
0.1
0.1
1
10
0.0
0
5
10
15
20
ID [A]
ID [A]
2
2SK3502-01MR
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
2.0
1.8
1.6
1.4
7.0
6.5
6.0
5.5
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
max.
5.0
VGS(th) [V]
RDS(on) [
Ω
]
4.5
4.0
3.5
3.0
2.5
min.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100
125
150
typ.
max.
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
Tch [
°
C]
Tch [
°
C]
Typical Gate Charge Characteristics
24
22
20
18
16
480V
Vcc= 120V
300V
1n
VGS=f(Qg):ID=10A, Tch=25°C
10n
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Ciss
VGS [V]
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
1p
10
-1
C [F]
100p
Coss
10p
Crss
10
0
10
1
10
2
10
3
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode
100
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
IF=f(VSD):80µs Pulse test,Tch=25°C
10
10
2
tr
td(off)
IF [A]
t [ns]
td(on)
10
1
tf
1
10
0.1
0.00
0
0.25
0.50
0.75
1.00
VSD [V]
1.25
1.50
1.75
2.00
10
0
10
1
ID [A]
3
2SK3502-01MR
FUJI POWER MOSFET
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
10
2
Maximum Avalanche Current vs Pulse width
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=60V
Avalanche Current I
AV
[A]
Single Pulse
10
1
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
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4
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