Data Sheet
500 mW EPITAXIAL
PLANAR DIODES
Mechanical Dimensions
JEDEC
D0-35
.060
.090
.120
.200
1.00 Min.
1N4448
Description
.018
.022
Features
n
PLANAR PROCESS
n
500 mW POWER DISSIPATION
n
INDUSTRY STANDARD DO-35
PACKAGE
n
MEETS UL SPECIFICATION 94V-0
1N4448
Units
Volts
Volts
Maximum Ratings
Peak Reverse Voltage...V
RM
RMS Reverse Voltage...V
R(rms)
Average Forward Rectified Current...I
O
Non-Repetitive Peak Forward Surge Current...I
FSM
Power Dissipation...P
D
Operating Temperature Range...T
J
Storage Temperature Range...T
STRG
Electrical Characteristics
Maximum Forward Voltage...V
F
@ I
F
= 100 mA
Maximum DC Reverse Current...I
R
@ V
R
= 75v
Maximum Frequency...f
Maximum Diode Capacitance...C
D
Maximum Reverse Recovery Time...t
RR
.01 uF
5K Ohms
50 Ohms
R
G
= 50 Ohms
Page 8-6
1N4448
100
75
............................................. 215 ............................................... mAmps
............................................. 500 ............................................... mAmps
............................................. 500 ...............................................
mW
......................................... -25 to 85 ..........................................
°C
°C
......................................... -65 to 150 ..........................................
............................................. 1.0 ...............................................
.............................................
.............................................
.............................................
.............................................
5.0
100
2.0
4.0
...............................................
...............................................
...............................................
...............................................
Output
Trr
I
R
0.1 I
R
Volts
µAmps
MHz
pF
ns
Test
Device Under Test
I
F