LAB
TO220–AC Package Outline.
Dimensions in mm (inches)
10.67 (0.420)
9.65 (0.380)
5.33 (0.210)
4.83 (0.190)
1.40 (0.020)
0.51 (0.055)
3.05 (0.120)
2.54 (1.000)
3.73 (0.147)
3.53 (0.139) Dia.
4.83 (0.190)
3.56 (0.140)
SEME
BFC62
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
2
16.51 (0.650)
14.22 (0.560)
6.86 (0.270)
5.84 (0.230)
1 2 3
14.73 (0.580)
12.70 (0.500)
6.35 (0.250)
4.60 (0.181)
1.78 (0.070)
0.99 (0.390)
V
DSS
I
D(cont)
R
DS(on)
0.66 (0.026)
0.41 (0.016)
2.92 (0.115)
2.03 (0.080)
800V
4.7A
Ω
2.40Ω
2.54 (0.100)
N o m.
5.08 (0.200)
N o m.
1.02 (0.040)
0.38 (0.015)
Terminal 1
Gate
Terminal 2
Drain
Terminal 3
Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
800
4.7
18.8
±30
125
–55 to 150
300
V
A
A
V
W
°C
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
D(ON)
R
DS(ON)
I
DSS
I
GSS
V
GS(TH)
Characteristic
Drain – Source Breakdown Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
Test Conditions
V
GS
= 0V , I
D
= 250µA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
=10V , I
D
= 0.5 I
D
[Cont.]
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
2
Min.
800
4.7
2.40
250
1000
±100
4
Typ.
Max. Unit
V
A
Ω
µA
nA
V
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/93
LAB
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.]
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.]
R
G
= 1.8Ω
Min.
Typ.
790
116
44
38
4.5
16
10
9
31
15
Max. Unit
950
163
66
55
7
24
20
18
47
30
ns
nC
pF
SEME
BFC62
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.] dl
s
/ dt = 100A/µs
160
1.5
320
3.0
Test Conditions
Min.
Typ.
Max. Unit
4.7
A
18.8
1.3
640
6.0
V
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
Characteristic
SOA1
Safe Operating Area
Test Conditions
V
DS
= 0.4V
DSS
, t = 1 Sec.
I
DS
= P
D
/ 0.4V
DSS
V
DS
= P
D
/ I
D
[Cont.]
I
DS
= I
D
[Cont.] , t = 1 Sec.
Min.
125
Typ.
Max. Unit
W
SOA2
I
LM
Safe Operating Area
Inductive Current Clamped
125
18.8
W
A
THERMAL CHARACTERISTICS
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Min.
Typ.
Max. Unit
1.0
°C/W
80
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/93
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