电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SB051P200-W-AG

产品描述Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp
文件大小150KB,共1页
制造商Transys Electronics Limited
官网地址http://www.transyselectronics.com
下载文档 选型对比 全文预览

SB051P200-W-AG概述

Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp

文档预览

下载PDF文档
SB051P200-W-Ag/Al
Schottky Barrier Diode Wafer
51 Mils, 200 Volt, 2 Amp
Data Sheet
Features
Oxide Passivated Junction
Low Forward Voltage
150 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Platinum Barrier
1. Solderable Surface Ti/Ni/Ag - Suffix "Ag"
2. Wire Bond Surface Aluminium - Suffix "Al"
Anode
Solderable
Surface Ti/Ni/Ag
Cathode
Cathode
Symbol
Electrical Characteristics @ 25
C
Maximum Repetitive Reverse Voltage (2)
Maximum Forward Voltage (1)(2)
Typical Average Forward Rectified Current (2)
Reverse Leakage Current (2)
Reverse Leakage Current @ 125 C (2)
Junction Operating Temperature Range (2)
Storage Temperature Range (2)
Symbol Unit
V
RRM
V
F
I
F(AV)
I
R
I
R
T
J
T
SG
Volt
Volt
Amp
SB051P200-W-Ag/Al
(See ordering code below)
200
0.83
2
10
5
-65 to +150
-65 to +150
µA
mA
C
C
(1) Pulse Width tp = < 300µS, Duty Cycle <2%
(2) The characteristics above assume the die are assembled in
indusry standard packages using appropriate attach methods.
Ordering Code
SB040P150-W-Ag
Schottky Barrier
40 Mils
Pt Barrier 150 Volt
Wafer Ti/Ni/Ag
Mechanical Dimensions
Wafer
Die
Wafer Diameter - 100 mm (4")
Wafer Thickness 420 +/- 20
Top (Anode) - Ti/Ni/Ag (Suffix "Ag")
or Aluminium (Suffix "Al")
Bottom (cathode) Ti/Ni/Ag
44.2
(1.124)
51.0
(1.3)
44.2
(1.124)
51.0
(1.3)
420 +/- 20 µm
Third Angle Protection
The information in this datasheet does not form part of any contract, quotation
guarantee,warranty or representation, it has been produced in good faith and is believed to
be accurate and may be changed without notice at anytime. Liability will not be accepted by
Transys Electronics LTD for any consequences whatsoever in its use. This publication does
not convey nor imply any license under patent or other intellectual/industrial property rights.
The products within this specification are not designed for use in any
life support
apparatus
whatsoever where malfunction can be reasonably expected to cause personal
injury or death. Customers using these products in the aforementioned applications do so at
their own risk and agree to fully indemnify Transys Electronics LTD for any damage/ legal
fees either direct, incidental or consequential from this improper use or sale.
Dimensions in mils (mm)
Transys Electronics LTD
Birmingham UK.
Email:
sales@transyselectronics.com
Website:
www.transyselectronics.com
Tel: + 44 (0) 121 776 6321
Fax: + 44 (0) 121 776 6997
SCD0897-1
Page 1 of 1

SB051P200-W-AG相似产品对比

SB051P200-W-AG SB051P200-W-Ag/Al
描述 Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp
仿真AD603单级方式和级联方式
本帖最后由 paulhyde 于 2014-9-15 03:06 编辑 先仿真后硬件调试,效果不错,与大家分享一下! ...
tegongboy 电子竞赛
at89s52问题请教
大家好 ! 我是学习单片机的新手 请问下 单片机的CPU芯片 如(AT89S52)它要进行ISP软件下载 而我们又要 进行编写自己的程序 那个ISP软件和自己编的程序 之间是什么关系呢? 不是自己编写 ......
firstshine 嵌入式系统
美信的这个比赛后续没有音讯了吗
结束到现在都没看到板块有帖子更新 ...
WZH70246 DIY/开源硬件专区
一则消息:关于移动医疗的市场预测
据速途研究院预测,2017年中国移动医疗市场规模有望达130亿元,移动医疗的软件和硬件相结合将带来市场的爆发式增长。据悉多家机构均对可穿戴医疗未来发展持乐观态度,2012年中国可穿戴医疗设备 ......
john_wang 无线连接
同步fifo的读写使能问题
如图,我的写fifo是间断的一个一个写进去的,写使能高电平是一个global_clk。可以把FIFO_clk反相一下吗?(图是在网上下载的,借图说话) ...
平漂流 FPGA/CPLD
MSP430 UCSI A0 的 UART 和 B0 的 IIC 是共用同一个中断吗?
MSP430 UCSI A0 的 UART 和 B0 的 IIC 是共用同一个中断吗?会不会有冲突呢?...
Study_Stellaris 微控制器 MCU

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 949  556  535  1525  1771  6  4  56  44  36 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved