VS-T40HFL, VS-T70HFL, VS-T85HFL Series
www.vishay.com
Vishay Semiconductors
Fast Recovery Diodes (T-Modules), 40 A, 70 A, 85 A
FEATURES
• Fast recovery time characteristics
• Electrically isolated base plate
• 3500 V
RMS
isolating voltage
• Standard JEDEC
®
package
• Simplified mechanical designs, rapid assembly
• Large creepage distances
• UL E78996 approved
• Designed and qualified for industrial level
D-55 (T-module)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The series of T-modules uses fast recovery power diodes in
a single diode configuration. The semiconductors are
electrically isolated from the metal base, allowing common
heatsink and compact assemblies to be built.
These single diode modules can be used in conjunction with
the thyristor modules as a freewheel diode. Application
includes self-commutated inverters, DC choppers, motor
control, inductive heating and electronic welders. These
modules are intended for those applications where very fast
recovery characteristics are required and for general power
switching applications.
PRODUCT SUMMARY
I
F(AV)
Type
40 A, 70 A, 85 A
Modules - Diode, Fast
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
t
rr
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
Range
Range
CHARACTERISTICS
T40HFL
40
T
C
70
63
475
500
1130
1030
T70HFL
70
70
110
830
870
3460
3160
100 to 1000
200 to 1000
-40 to +125
T85HFL
85
70
133
1300
1370
8550
7810
UNITS
A
°C
A
A
A
2
s
V
ns
°C
Revision: 20-Dec-16
Document Number: 93184
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-T40HFL, VS-T70HFL, VS-T85HFL Series
www.vishay.com
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
VS_T40HFL..
VS_T70HFL..
VS_T85HFL..
40
60
80
100
t
rr
CODE
S02, S05, S10
S02, S05, S10
S02, S05, S10
S02, S05, S10
S05, S10
S05, S10
V
RRM,
MAXIMUM REPETITIVE V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
PEAK REVERSE VOLTAGE
V
V
100
200
400
600
800
1000
150
300
500
700
900
1100
100
I
RRM
MAXIMUM
AT T
J
= 25 °C
μA
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
t = 8.3 ms
I
FSM
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold
voltage
Low level value of forward slope
resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 %
V
RRM
reapplied
No voltage
reapplied
100 %
V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
VALUES
T40HFL T70HFL T85HFL
40
63
475
500
400
Sinusoidal half wave,
initial T
J
= T
J
maximum
420
1130
1030
800
730
11 300
0.82
0.84
7.0
6.8
1.60
70
70
110
830
870
700
730
3460
3160
2450
2230
34 600
0.87
0.90
2.77
2.67
1.73
133
1300
1370
1100
1150
8550
7810
6050
5520
85 500
0.84
0.86
2.15
m
T
J
= 25 °C, (I >
x I
F(AV)
)
I
FM
= x I
F(AV)
, T
J
= 25 °C, t
p
= 400 μs square wave
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
2.07
1.55
V
V
A
2
s
A
2
s
A
85
UNITS
A
°C
A
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= 25 °C, (16.7 % x
x I
F(AV)
< I <
x I
F(AV)
)
T
J
= 25 °C, (I >
x I
F(AV)
)
T
J
= 25 °C, (16.7 % x
x I
F(AV)
< I <
x I
F(AV)
)
REVERSE RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
(1)
S02
Maximum reverse
recovery time
T
J
= 25 °C, -dI
F
/dt = 100 A/μs
I
F
= 1 A to V
R
= 30 V
T
J
= 25 °C, -dI
F
/dt = 25 A/μs
I
FM
=
x rated I
F(AV)
, V
R
= - 30 V
T
J
= 25 °C, -dI
F
/dt = 100 A/μs
I
F
= 1 A to V
R
= 30 V
T
J
= 25 °C, -dI
F
/dt = 25 A/μs
I
FM
=
x rated I
F(AV)
, V
R
= - 30 V
70
200
0.25
0.55
T40HFL
S05
110
500
0.4
2.0
S10
270
1000
1.35
8.0
S02
70
200
0.25
0.6
T70HFL
S05
110
500
0.4
2.1
S10
270
1000
1.35
8.5
S02
80
200
0.3
0.8
T85HFL
S05
120
500
0.6
3.5
S10
290
ns
1000
1.6
μC
1.5
UNITS
t
rr
Maximum reverse
recovery charge
Q
rr
Note
(1)
Tested on LEM 300 A diodemeter tester
Revision: 20-Dec-16
Document Number: 93184
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-T40HFL, VS-T70HFL, VS-T85HFL Series
www.vishay.com
Vishay Semiconductors
BLOCKING
PARAMETER
Maximum peak reverse leakage current
RMS isolation voltage
SYMBOL
I
RRM
V
ISOL
TEST CONDITIONS
T
J
= 125 °C
50 Hz, circuit to base, all terminals shorted,
T
J
= 25 °C, t = 1 s
T40HFL T70HFL T85HFL UNITS
20
3500
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating temperature range
Storage temperature range
Maximum internal thermal
resistance, junction to case
per module
Thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style
base to heatsink
busbar to terminal
T40HFL
T70HFL
T85HFL
R
thCS
Non-lubricated
threads
Mounting surface, flat,
smooth and greased
M3.5 mounting screws
(1)
M5 screws terminals
See dimensions -
link at the end of datasheet
R
thJC
DC operation
SYMBOL
T
J
T
Stg
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.85
0.53
0.46
0.2
1.3 ± 10 %
3 ± 10 %
54
19
D-55 (T-module)
Nm
g
oz.
K/W
UNITS
°C
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of
the compound
R
CONDUCTION
DEVICES
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
180°
T40HFL
T70HFL
T85HFL
0.06
0.05
0.04
120°
0.08
0.06
0.05
90°
0.10
0.08
0.06
60°
0.14
0.11
0.09
30°
0.24
0.19
0.15
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
180°
0.05
0.04
0.03
120°
0.08
0.06
0.05
90°
0.10
0.08
0.07
60°
0.15
0.12
0.09
30°
0.24
0.19
0.015
K/W
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowab le Case T
emperature (°C)
Maximum Allowa ble Case T
emperature (°C)
130
120
110
100
90
80
70
60
50
0
10
T
40HF S
L.. eries
R
thJC
(DC) = 0.85 K/ W
130
120
110
100
Conduc tion Period
T
40HF S
L.. eries
R
thJC
(DC) = 0.85 K/ W
Conduc tion Angle
90
80
30°
70
60
50
0
10
20
30
40
50
60
70
Average F
orward Current (A)
60°
90°
120°
180°
DC
30°
60°
90°
120°
180°
20
30
40
50
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Revision: 20-Dec-16
Document Number: 93184
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-T40HFL, VS-T70HFL, VS-T85HFL Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case T
emperature (°C)
130
120
110
100
Conduction Period
Maximum Allowable Case T
emp erature (°C)
130
120
110
100
90
80
70
60
50
0
10
T
70HFL.. S
eries
R
thJC
(DC) = 0.53 K/ W
T
85HF S
L.. eries
R
thJC
(DC) = 0.46 K/ W
Conduction Angle
90
80
30°
70
60
50
0
20
40
60
80
100
120
140
Average Forward Current (A)
60°
90°
120°
180°
DC
30°
60°
90°
120°
180°
20
30
40
50
60
70
80
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
Maximum Average F
orward Power Lo ss (W)
Maximum Allowa ble Cas T
e emperature (°C)
130
120
110
100
Conduction Period
70
60
50
40
30
20
10
0
0
5
T
70HFL.. S
eries
R
thJC
(DC) = 0.53 K/ W
180°
120°
90°
60°
30°
RMSLimit
90
80
30°
70
60
50
0
20
40
60
80
100
120
Average Forward Current (A)
60°
90°
120°
180°
DC
Conduc tion Angle
T
40HF S
L.. eries
T
J
= 125°C
10
15
20
25
30
35
40
Average F
orward Current (A)
Fig. 4 - Current Ratings Characteristics
Fig. 7 - Forward Power Loss Characteristics
Ma ximum Average F
orward Power Lo s (W)
s
Maximum Allowable Case T
emperature (°C)
130
120
110
100
90
80
T
85HF S
L.. eries
R
thJC
(DC) = 0.46 K/ W
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
Average F
orward Current (A)
Conduc tion Period
DC
180°
120°
90°
60°
30°
RMS Limit
Conduc tion Angle
30°
70
60
50
0
10
20
30
40
60°
90°
120°
180°
50
60
70
80
90
T
40HF S
L.. eries
T
J
= 125°C
Average Forward Current (A)
Fig. 5 - Current Ratings Characteristics
Fig. 8 - Forward Power Loss Characteristics
Revision: 20-Dec-16
Document Number: 93184
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-T40HFL, VS-T70HFL, VS-T85HFL Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
160
140
120
100
80
RMSLimit
60
Conduc tion Period
Maximum Average Forward Power Loss (W)
100
90
80
70
60
50
40
30
20
10
0
0
10
180°
120°
90°
60°
30°
RMS Limit
DC
180°
120°
90°
60°
30°
Conduc tion Angle
40
20
0
0
20
40
60
80
100
120
140
Average F
orward Current (A)
T
85HFL.. S
eries
T
J
= 125°C
T
70HF S
L.. eries
T = 125°C
J
20
30
40
50
60
70
Average Forward Current (A)
Fig. 9 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
Peak Half S
ine Wave F
orwa rd Current (A)
Maximum Average Forward Power Los (W)
s
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
Average F
orward Current (A)
RMS Limit
Conduc tion Period
450
400
350
300
250
200
150
100
1
DC
180°
120°
90°
60°
30°
At Any Ra ted Loa d Cond ition And With
Rated V
RRM
App lied Following S
urge.
Initial T
J
125°C
=
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
T
70HF S
L.. eries
T
J
= 125°C
T
40HFL.. S
eries
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 10 - Forward Power Loss Characteristics
Fig. 13 - Maximum Non-Repetitive Surge Current
Peak Half S
ine Wave F
orwa rd Current (A)
Maximum Average Forward Power Loss (W)
110
100
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
90
Average Forward Current (A)
T
85HFL.. S
eries
T
J
= 125°C
Conduc tion Angle
500
450
400
350
300
250
200
150
100
0.01
180°
120°
90°
60°
30°
RMS Limit
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T
J
= 125°C
No Voltage Reapplied
R
ated V
RRM
Reapplied
T
40HF S
L.. eries
0.1
Pulse T
rain Duration (s)
1
Fig. 11 - Forward Power Loss Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
Revision: 20-Dec-16
Document Number: 93184
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Linux开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
