Transys
Electronics
L I M I T E D
TO-126 Plastic-Encapsulated Transistors
2SD2583
FEATURES
Power dissipation
P
CM
:
1
W (Tamb=25℃)
1. EMITTER
2. COLLECTOR
3. BASE
TRANSISTOR (NPN)
TO-126
Collector current
5
A
I
CM
:
Collector-base voltage
30
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
V
CE
=
2
V, I
C
=
4
A
I
C
=
1
A, I
B
=50mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
=2A, I
B
=100mA
I
C
=
4
A, I
B
=200mA
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
BE(sat)
I
C
=2A, I
B
=100mA
123
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
0.1
mA, I
E
=0
Ic=
1
mA, I
B
=0
I
E
=
0.1m
A, I
C
=0
V
CB
=
30
V, I
E
=0
V
EB
=
6
V, I
C
=0
V
CE
=
2
V, I
C
=1A
30
30
6
0.1
0.1
150
50
0.15
0.25
0.5
1.5
120
77
600
µA
µA
V
V
MHz
pF
f
T
C
ob
V
CE
=
10
V, I
C
=
50
mA
V
CB
=
10
V, I
E
=0, f=
1
MHz
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