Transys
Electronics
L I M I T E D
TO-252 Plastic-Encapsulated Transistors
2SD1899-Z
FEATURES
Power dissipation
P
CM
:
2
W (Tamb=25℃)
TRANSISTOR (NPN)
TO-252
1. BASE
2. COLLECTOR
Collector current
3
A
I
CM
:
Collector-base voltage
60
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on Time
Switching Time
Storage Time
Fall Time
V
CE(sat)
V
BE(sat)
3. EMITTER
1
2 3
unless otherwise specifie)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
100
µA, I
E
=0
Ic=
1
mA, I
B
=0
I
E
=
100
µA,I
C
=0
V
CB
=
60
V, I
E
=0
V
EB
=
7
V, I
C
=0
V
CE
=
2
V, I
C
=
200
mA
V
CE
=
2
V, I
C
=
600
mA
V
CE
=
2
V, I
C
=
2
A
I
C
=
1.5
A, I
B
=
150
mA
I
C
=
1.5
A, I
B
=
150
mA
V
CE
=
5
V, I
C
=
1.5
A
V
CB
=
10
V, I
E
=0, f=
1
MHz
60
60
7
10
10
60
100
50
0.25
1.2
120
30
0.5
400
µA
µA
V
V
MHz
pF
f
T
C
ob
t
on
t
stg
t
f
V
CC
=30V, I
C
=1A, I
B1
=-I
B2
=-0.05A
2.0
0.5
µs
CLASSIFICATION OF h
FE(1)
Rank
Range
M
100-200
L
160-320
K
200-400
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