Transys
Electronics
L I M I T E D
TO-251 Plastic-Encapsulated Transistors
2SC4003
TRANSISTOR (NPN)
TO-251
FEATURES
Power dissipation
P
CM
:
1
W (Tamb=25℃)
1. BASE
2. COLLECTOR
3. EMITTER
Collector current
200
mA
I
CM
:
Collector-base voltage
400
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
1
2
3
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
10
µA, I
E
=0
Ic=
1
mA, I
B
=0
I
E
=
10
µA, I
C
=0
V
CB
=
300
V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=
10
V, I
C
=
50
mA
I
C
=
50
mA, I
B
=
5
mA
I
C
=
50
mA, I
B
=
5
mA
V
CE
=
30
V, I
C
=
10
mA
400
400
5
0.1
0.1
60
200
0.6
1
70
µA
µA
V
V
MHz
f
T
CLASSIFICATION OF h
FE(1)
Rank
Range
D
60-120
E
100-200
DSP 与 ARM 处理器
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