Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SC1213
2SC1213A
FEATURE
Power dissipation
P
CM
:
Collector current
I
CM
:
Collector-base voltage
V
(BR)CBO
:
TRANSISTOR (NPN)
TO-92
1. EMITTER
2. COLLECTOR
0.4
W (Tamb=25℃)
3. BASE
0.5
A
1 2 3
2SC1213 :
35 V
2SC1213A :
50 V
Operating and storage junction temperature range
T
J
, T
stg
:
-55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
2SC1213
2SC1213A
Collector-emitter breakdown voltage 2SC1213
2SC1213A
Emitter-base breakdown voltage
Collector cut-off current
unless otherwise specified)
Test
conditions
MIN
35
50
35
50
4
0.5
60
10
0.2
0.6
0.75
V
V
320
TYP
MAX
UNIT
V
Symbol
V(BR)
CBO
Ic= 10µA , I
E
=0
V(BR)
CEO
V(BR)
EBO
I
CBO
h
FE(1)
I
C
= 1 mA , I
B
=0
I
E
=10µA, I
C
=0
V
CB
= 20V , I
E
=0
V
CE
=3V, I
C
= 10mA
V
CE
=3V, I
C
= 500mA
I
C
= 150mA, I
B
= 15 mA
V
CE
= 3V, I
C
= 10 mA
V
V
µA
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE
CLASSIFICATION OF h
FE(1)
Rank
Range
B
60-120
C
100-200
D
160-320
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