Transys
Electronics
L I M I T E D
TO-92MOD Plastic-Encapsulated Transistors
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
2SB647/2SB647A
FEATURE
Power dissipation
P
CM
:
TRANSISTOR (PNP)
0.9 W (Tamb=25℃)
Collector current
-1 A
I
CM:
Collector-base voltage
120 V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage 2SB647
unless otherwise specified)
Test
conditions
MIN
-120
-80
-100
-5
-10
60
60
30
-1
140
V
MHz
320
200
MAX
UNIT
V
V
V
µA
Symbol
V
(BR)CBO
V
(BR)CEO
2SB647A
Ic= -10µA , I
E
=0
I
C
=-1mA , I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -100 V, I
E
=0
V
CE
=-5 V, I
C
= -150mA
V
CE
=-5 V, I
C
= -500mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
= -150mA
V
CE
=-10V, I
E
=0
f=1 MHz
Emitter-base breakdown voltage
Collector cut-off current
2SB647
2SB647A
DC current gain
V
(BR)EBO
I
CBO
h
FE(1)*
h
FE(2)
Collector-emitter saturation voltage
Transition frequency
V
CEsat
f
T
C
ob
Output capacitance
20
pF
CLASSIFICATION OF h
FE
Rank
2SB647
Range
2SB647A
60-120
100-200
-
B
60-120
C
100-200
D
160-320
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