Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SA562
FEATURE
Power dissipation
P
CM
: 0.5
TRANSISTOR (PNP)
TO-92
1. EMITTER
W (Tamb=25℃)
2. COLLECTOR
Collector current
A
I
CM :
-0.5
Collector-base voltage
V
(BR) CBO
: -35 V
Operating and storage junction temperature range
T
stg
:
T
J
:
-55℃ to +150℃
150℃
3. BASE
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
unless otherwise specified)
Test
conditions
MIN
-35
-30
-5
-0.1
-0.1
70
240
-0.25
-1
V
V
TYP
MAX
UNIT
V
V
V
µA
µA
Ic= -100µA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
= -100µA, I
C
=0
V
CB
=-35V , I
E
=0
V
EB
= -5V ,
I
C
=0
V
CE
=-1 V, I
C
=-100mA
I
C
= -100mA, I
B
= -10 mA
V
CE
=- 1V, I
C
=-100 mA
V
CE
= -6 V, I
C
= -20mA
Transition frequency
f
T
F=30MHz
200
MHz
CLASSIFICATION OF h
FE
Rank
Range
O
Y
120-240
h
FE(1)
70-140
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
