Transys
Electronics
L I M I T E D
SOT-523 Plastic-Encapsulated Transistors
SOT-523
2SA1832
FEATURES
Power dissipation
P
CM
TRANSISTOR (PNP)
1.
BASE
2.
EMITTER
3.
COLLECTOR
: 0.1
W (Tamb=25℃)
Collector current
: -0.15
A
I
CM
Collector-base voltage
V
V
(BR)CBO
: -50
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
-50
-50
-5
-0.1
-0.1
120
400
-0.3
80
7
µ
A
µ
A
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
Y
120-240
SY
GR
200-400
SG
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