Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1119
SOT-89
1.
BASE
2.
COLLECTOR
P
CM
:
500 mW (Tamb=25℃)
3.
EMITTER
1
2
3
TRANSISTOR (PNP)
FEATURES
Power dissipation
Collector current
-1
A
I
CM
:
Collector current (Pulse)
ICP:
-2
A
Collector-base voltage
-25
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(SAT)
V
CE
=
-2
V, I
C
=
-1
A
I
C
=
-500
mA, I
B
=
-50
mA
I
C
=
-500
mA, I
B
=
-50
mA
V
CE
=
-10
V, I
C
=
-50
mA
V
CB
=
-10
V, f=
1
MHz
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=-
10
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
I
E
=
-10
µA,
I
C
=0
V
CB
=
-20
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-2
V, I
C
=
-50
mA
-25
-25
-5
-0.1
-0.1
100
40
-0.7
-1.2
180
25
560
µA
µA
V
v
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
R
100-200
S
140-280
BB
T
200-400
U
280-560
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