Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SA673
FEATURE
Power dissipation
P
CM
: 0.4 W (Tamb=25℃)
Collector current
I
CM:
-0.5 A
Collector-base voltage
V
(BR)CBO
: -35 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
TRANSISTOR (PNP)
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
h
FE(1)
*
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
V
CEsat
*
V
BE
unless otherwise specified)
Test
conditions
MIN
-35
-35
-4
-0.5
60
10
-0.6
-0.75
V
V
320
TYP
MAX
UNIT
V
V
V
µA
Ic= -10µA , I
E
=0
I
C
=-1 mA , I
B
=0
I
E
=-10µA, I
C
=0
V
CB
= -20 V , I
E
=0
V
CE
=-3V, I
C
= -10mA
V
CE
=-3 V, I
C
=-500mA
I
C
= -150mA, I
B
=-15mA
V
CE
=-3 V, I
C
=-10mA
*
Measured using pulse
CLASSIFICATION OF h
FE(1)
Rank
Range
B
60-120
C
100-200
D
160-320
单片机
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