Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SA1296
FEATURES
Power dissipation
P
CM
: 0.75
W (Tamb=25℃)
2.
COLLECTOR
TRANSISTOR (PNP)
TO-92
1.
EMITTER
Collector current
: -2
A
I
CM
Collector-base voltage
V
V
(BR)CBO
: -20
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
3.
BASE
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-0.1
mA, I
E
=0
Ic=
-10
mA, I
B
=0
I
E
=
-0.1m
A, I
C
=0
V
CB
=
-20
V, I
E
=0
V
EB
=
-6
V, I
C
=0
V
CE
=
-2
V, I
C
=
-0.1
A
V
CE
=
-2
V, I
C
=
-2
A
I
C
=
-2
A, I
B
=
-0.1
A
V
CE
=
-2
V, I
C
=
-0.1
A
V
CE
=
-2
V, I
C
=
-0.5
A
V
CB
=
-10
V, I
E
=0,f=
1
MHz
-20
-20
-6
-0.1
-0.1
120
40
-0.5
-0.85
120
40
400
µA
µA
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
Y
120-240
GR
200-400
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