Transys
Electronics
L I M I T E D
SOT-23-3L Plastic-Encapsulated Transistors
SOT-23-3L
2SA1162
FEATURES
Power dissipation
P
CM
TRANSISTOR (PNP)
1.
BASE
2.
EMITTER
3.
COLLECTOR
1. 02
: 150
mW (Tamb=25℃)
0.
0. 95¡ À 025
2. 80¡ À 05
0.
1. 60¡ À0. 05
Collector current
: 150
mA
I
CM
Collector-base voltage
V
V
(BR)CBO
: -50
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-100
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
I
E
=
-100
µA,
I
C
=0
V
CB
=
-50
V, I
E
=0
V
EB
=
-5
V, I
C
=0
V
CE
=
-6
V, I
C
=
-2
mA
I
C
=
-100
mA, I
B
=
-10
mA
V
CE
=
-10
V, I
C
=
-1
mA
V
CB
=
-10
V, I
E
=0, f=
1
MHz
V
CE
=
-6
V, I
c
=
0.1
mA,
f=
1K
HZ, Rg=
10
KΩ
-50
-50
-5
-0.1
-0.1
70
400
-0.3
80
7
0. 35
2. 92¡ À0. 05
1. 9
µA
µA
V
MHz
pF
f
T
C
ob
Noise figure
NF
10
dB
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
O
70-140
SO
Y
120-240
SY
GR
200-400
SG
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