Schottky Barrier Diode
FMEN-210A
■General
Description
FMEN-210A is a High Voltage (100V) Schottky Barrier
Diode, and has achieved low leakage current and low VF by
selecting the best barrier metal.
March, 2006
■Package
---TO220F
■Applications
• DC-DC converters
• AC adapter
• High frequency rectification circuit
■Key
Specifications
Item
V
RM
V
F
I
F(AV)
Unit
V
V
A
Rating
100
0.85
10
I
F
=5.0A
Conditions
■Features
• High Voltage 100V guaranteed.
• Steady operation is possible even at the high temperature
by the low leakage current.
• Super-high speed & low switching noise.
• Low forward voltage drop
.
Typical Characteristics
IF-VF Characteristics
1.0E+02
1.0E-02
Tj=150℃
VR-IR Charcteristics
Tj=125℃
1.0E+01
1.0E-03
Tj=100℃
1.0E+00
IR (A)
150℃
1.0E-04
IF (A)
1.0E-01
125℃
100℃
1.0E-05
Tj=25℃
1.0E-02
25℃
1.0E-06
1.0E-03
0
0.5
VF (V)
1
1.5
1.0E-07
0
10
20
30
40
50 60
VR (V)
70
80
90
100
.
Sanken Electric Co.,Ltd
.
http://www.sanken-ele.co.jp/en/
1/7
D01-009EA-060310
Schottky Barrier Diode
FMEN-210A
Absolute maximum ratings
No.
1
2
3
4
5
6
7
Parameter
Transient Peak Reverse Voltage
Peak Reverse Voltage
Average Forward Current
Peak Surge Forward Current
I
2
t Limiting Value
Junction Temperature
Storage Temperature
Symbol
Unit
Rating
March, 2006
Conditions
V
RSM
V
RM
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
V
V
A
A
A
2
s
°C
°C
100
100
10
100
50
-40 to +150
-40 to +150
Half sinewave, one shot
1msec
≤
t
≤
10msec
No.1,2,4&5 show ratings per one chip.
Electrical characteristics(Ta=25°C，unless otherwise specified)
No.
1
2
3
4
Parameter
Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current Under
High Temperature
Thermal Resistance
Symbol
V
F
I
R
H•I
R
R
th(j-c)
Unit
V
uA
mA
°C/W
Value
0.85 max.
100 max.
50 max.
4.0 max.
I
F
=5.0A
V
R
=V
RM
Conditions
V
R
=V
RM
, T
j
=150°C
Between Junction and case
No.1,2,&3 show characteristics per one chip.
Sanken Electric Co.,Ltd
.
D01-090EA-060310
2/7
Schottky Barrier Diode
FMEN-210A
Characteristics
Forward Power Dissipation
Forward Power Dissipation PF (W)
March, 2006
Average Forward Current I
F(AV)
(A)
Reverse Power Dissipation
Reverse Power Dissipation PR (W)
Reverse Voltage V
R
(V)
Current Derating
Average Forward Current I
F(AV)
(A)
Case temperature Tc (°C)
Sanken Electric Co.,Ltd
.
D01-090EA-060310
3/7
Schottky Barrier Diode
FMEN-210A
<Worldwide Contacts>
March, 2006
Asia Pacific
China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: 852-2735-5262
Fax: 852-2735-5494
Sanken Electric (Shanghai) Co., Ltd.
Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China
Tel: 86-21-5208-1177
Fax: 86-21-5208-1757
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161
Fax: 886-2-2356-8261
India
Saket Devices Pvt. Ltd.
Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India
Tel: 91-20-5621-2340
91-20-2528-5449
Fax: 91-20-2528-5459
Japan
Sanken Electric Co., Ltd. Overseas Sales Headquaters
Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan
Tel: 81-3-3986-6164
Fax: 81-3-3986-8637
Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Tel: 82-2-714-3700
Fax: 82-2-3272-2145
Singapore
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West, Singapore 189720
Tel: 65-6291-4755
Fax: 65-6297-1744
Sanken Electric Co.,Ltd
.
D01-090EA-060310
5/7
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