60V N -ch MOSFET
2SK3711
December 2005
■Features
•
Low on-resistance
•
Built-in gate protection diode
•
Avalanche energy capability guaranteed
■Package—TO3P
■Applications
•
Electric power steering
•
High current switching
■Equivalent
circuit
D (2)
G (1)
S (3)
Absolute maximum ratings
(Ta=25°C)
Characteristic
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Single Pulse Avalanche Energy
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
(pulse)
*1
PD
EAS
*2
Tch
Tstg
Rating
60
±20
±70A
±140A
130 (Tc=25°C)
468
150
-55 to 150
Unit
V
V
A
A
W
mJ
°C
°C
*1 PW≤100μs, duty cycle≤1%
*2 V
DD
=20V, L=1mH, I
Lp
=25A, unclamped, R
G
=50Ω. See Fig.1
.
Sanken Electric Co.,Ltd.
http://www.sanken-ele.co.jp/en/
T02-002EA-05112
4
1/9
60V N -ch MOSFET
2SK3711
December 2005
Electrical characteristics
(Ta=25°C)
Characteristic
Symbol
Test Conditions
Limits
MIN
60
±10
100
2.0
30
3.0
80
5.0
8000
1250
1000
110
100
6.0
4.0
TYP
MAX
Unit
V
μA
μA
V
S
mΩ
Drain to Source breakdown Voltage
V(BR)DSS
IGSS
IDSS
VTH
Re(Yfs)
RDS(ON)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
I
D
=100μA,V
GS
=0V
V
GS
=±15V
V
DS
=60V, V
GS
=0V
V
DS
=10V, I
D
=1mA
V
DS
=10V, I
D
=35A
I
D
=35A, V
GS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
Gate to Source Leakage Current
Drain to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Forward Voltage
pF
I
D
=35A, V
DD
≈20V
RL=0.57Ω,
VGS=10V
Rg=22Ω
Refer to Fig. 2
I
SD
=50A,V
GS
=0V
ISD=25A,
di/dt=50A/μs
ns
440
160
0.9
100
1.5
V
ns
Source-Drain Diode
Recovery Time
Sanken Electric Co.,Ltd.
T02-002EA-05112
4
2/9
60V N -ch MOSFET
2SK3711
December 2005
Characteristic Curves
2SK3711
I
D
-V
DS
Characteristic (typical)
80
Ta=25℃
VGS=10V
70
VGS=5.0V
(Tc=25°C)
2SK3711
R
DS(ON)
-Tc
Characteristic (typical)
12.0
VGS=10V
ID=35A
10.0
60
VGS=4.5V
8.0
50
RDS(ON) (mΩ)
VGS=4.0V
ID (A)
40
6.0
30
4.0
20
2.0
10
0.0
0
0.0
0.5
1.0
VDS (V)
1.5
2.0
-100
-50
0
50
Tc (℃)
100
150
200
2SK3711
P
D
-T
C
Characteristic
140
∞ Fin
2SK3711
R
DS(ON)
-I
D
Characteristic (typical)
7.0
120
6.0
Ta=25℃
VGS=10V
100
5.0
80
PD (W)
RDS(ON) (mΩ)
4.0
60
3.0
40
2.0
20
1.0
0
0
50
Tc (℃)
100
150
0.0
0
10
20
30
40
ID (A)
50
60
70
80
2SK3711
I
D
-V
GS
Characteristic (typical)
80
VDS=10V
2SK3711
V
DS
-V
GS
Characteristic (typical)
1.0
70
60
0.8
50
0.6
40
Tc=-55℃
Tc=25℃
30
Tc=150℃
VDS (V)
0.4
ID (A)
ID=70A
20
0.2
ID=35A
10
0.0
0
0.0
1.0
2.0
3.0
4.0
VGS (V)
5.0
6.0
7.0
0
5
10
VGS (V)
15
20
Sanken Electric Co.,Ltd.
T02-002EA-05112
4
3/9
60V N -ch MOSFET
2SK3711
December 2005
Characteristic Curves
2SK3711
I
DR
-V
ＳＤ
Characteristic (typical)
80
(Tc=25°C)
2SK３７１１
SAFE OPERATING AREA
1000
2SK3711
capacitance-V
DS
Characteristic (typical)
100000
Ta=25℃
VGS=0V
f=1MHz
70
ID(pu lse ) m ax
60
100
５0 0 μs(1 sh o t
)
10000
50
Ciss
RDS (o n ) LIM IT ED
1 m s ( 1 sh o t )
capacitance (pF)
ID [A]
IDR (A)
40
10
1 0 m s (1 sh o t )
Tc=150℃
30
Tc=25℃
1000
Tc=-55℃
20
Coss
1
Crss
10
0.1
0
0.0
0.2
0.4
0.6
0.8
VSD (V)
1.0
1.2
1.4
100
0
10
20
VDS (V)
30
40
50
0.1
1
10
100
VDS [V]
Transient Thermal Resistance vs Pulse Width
10
２SK3711
1
θ½-½ （℃/W）
0.1
0.01
0.0001
0.001
0.01
0.1
PW （sec）
1
10
100
Sanken Electric Co.,Ltd.
T02-002EA-05112
4
4/9
60V N -ch MOSFET
2SK3711
December 2005
Fig.1 Unclamped Inductive Test Method
EAS=
L
V
(BR)DSS
1
•L•ILP
2
•
2
V
(BR)DSS -
V
DD
I
L
V
DS
I
Lp
R
G
V
GS
0V
V
DD
I
L
V
DS
V
(BR)DSS
V
DD
(a) Test Circuit
(b) Waveforms
Fig.2
Switching Time Test Method
R
L
I
D
V
DS
R
G
V
GS
0V
P.W.=10μs
Duty cycle≦1%
V
DD
V
DD
≈20V
I
D
=35A
R
L
=0.57Ω
V
GS
=10V
R
G
=22Ω
(a) Test Circuit
90%
V
GS
10%
90%
V
DS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
(b) Waveforms
Sanken Electric Co.,Ltd.
T02-002EA-05112
4
5/9
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