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IDT70V3399S166BFG

产品描述Dual-Port SRAM, 128KX18, 3.6ns, CMOS, CBGA208, 15 X 15 MM X 1.4 MM, 0.80 MM PITCH, GREEN, FPBGA-208
产品类别存储   
文件大小218KB,共23页
制造商IDT (Integrated Device Technology)
标准  
下载文档 详细参数 选型对比 全文预览

IDT70V3399S166BFG概述

Dual-Port SRAM, 128KX18, 3.6ns, CMOS, CBGA208, 15 X 15 MM X 1.4 MM, 0.80 MM PITCH, GREEN, FPBGA-208

IDT70V3399S166BFG规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
零件包装代码BGA
包装说明LFBGA, BGA208,17X17,32
针数208
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间3.6 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)166 MHz
I/O 类型COMMON
JESD-30 代码S-CBGA-B208
JESD-609代码e1
长度15 mm
内存密度2359296 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度18
湿度敏感等级3
功能数量1
端口数量2
端子数量208
字数131072 words
字数代码128000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织128KX18
输出特性3-STATE
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码LFBGA
封装等效代码BGA208,17X17,32
封装形状SQUARE
封装形式GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源2.5/3.3,3.3 V
认证状态Not Qualified
座面最大高度1.7 mm
最大待机电流0.03 A
最小待机电流3.15 V
最大压摆率0.5 mA
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度15 mm
Base Number Matches1

文档预览

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HIGH-SPEED 3.3V
256/128K x 18
IDT70V3319/99S
SYNCHRONOUS
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
Features:
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed data access
– Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)
– Industrial: 4.2ns (133MHz) (max.)
Selectable Pipelined or Flow-Through output mode
– Due to limited pin count PL/
FT
option is not supported
on the 128-pin TQFP package. Device is pipelined
outputs only on each port.
Counter enable and repeat features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 6ns cycle time, 166MHz operation (6Gbps bandwidth)
– Fast 3.6ns clock to data out
– 1.7ns setup to clock and 0.5ns hold on all control, data, and
address inputs @ 166MHz
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
Separate byte controls for multiplexed bus and bus
matching compatibility
Dual Cycle Deselect (DCD) for Pipelined Output mode
LVTTL- compatible, single 3.3V (±150mV) power supply
for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Industrial temperature range (-40°C to +85°C) is
available at 133MHz.
Available in a 128-pin Thin Quad Flatpack, 208-pin fine
pitch Ball Grid Array, and 256-pin Ball
Grid Array
Supports JTAG features compliant to IEEE 1149.1
– Due to limited pin count, JTAG is not supported on the
128-pin TQFP package
Green parts available, see ordering information
Functional Block Diagram
UB
L
LB
L
UB
R
LB
R
FT/PIPE
L
1/0
0a 1a
a
0b 1b
b
1b 0b
b
1a 0a
a
1/0
FT/PIPE
R
R/W
L
CE
0L
CE
1L
1
0
1/0
B
W
0
L
B
W
1
L
B B
WW
1 0
R R
1
0
1/0
R/W
R
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
1b 0b 1a 0a
0a 1a 0b 1b
0/1
,
FT/PIPE
R
FT/PIPE
L
0/1
ab
ba
256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
CLK
L
A
17L(1)
A
0L
REPEAT
L
ADS
L
CNTEN
L
CLK
R
,
A
17R(1)
Counter/
Address
Reg.
ADDR_L
ADDR_R
Counter/
Address
Reg.
A
0R
REPEAT
R
ADS
R
CNTEN
R
5623 tbl 01
NOTE:
1. A
17
is a NC for IDT70V3399.
TDI
JTAG
TDO
TCK
TMS
TRST
JANUARY 2009
DSC 5623/9
1
©2009 Integrated Device Technology, Inc.

IDT70V3399S166BFG相似产品对比

IDT70V3399S166BFG IDT70V3399S133BFGI8 IDT70V3399S133BFGI IDT70V3399S166BFG8
描述 Dual-Port SRAM, 128KX18, 3.6ns, CMOS, CBGA208, 15 X 15 MM X 1.4 MM, 0.80 MM PITCH, GREEN, FPBGA-208 Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA208, FBGA-208 Dual-Port SRAM, 128KX18, 4.2ns, CMOS, CBGA208, 15 X 15 MM X 1.4 MM, 0.80 MM PITCH, GREEN, FPBGA-208 Dual-Port SRAM, 128KX18, 12ns, CMOS, PBGA208, FBGA-208
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 BGA BGA BGA BGA
包装说明 LFBGA, BGA208,17X17,32 TFBGA, BGA208,17X17,32 LFBGA, BGA208,17X17,32 TFBGA, BGA208,17X17,32
针数 208 208 208 208
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 3.6 ns 15 ns 4.2 ns 12 ns
其他特性 FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK) 166 MHz 133 MHz 133 MHz 166 MHz
I/O 类型 COMMON COMMON COMMON COMMON
JESD-30 代码 S-CBGA-B208 S-PBGA-B208 S-CBGA-B208 S-PBGA-B208
JESD-609代码 e1 e1 e1 e1
长度 15 mm 15 mm 15 mm 15 mm
内存密度 2359296 bit 2359296 bit 2359296 bit 2359296 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 18 18 18 18
湿度敏感等级 3 3 3 3
功能数量 1 1 1 1
端口数量 2 2 2 2
端子数量 208 208 208 208
字数 131072 words 131072 words 131072 words 131072 words
字数代码 128000 128000 128000 128000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 85 °C 85 °C 70 °C
组织 128KX18 128KX18 128KX18 128KX18
输出特性 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
封装代码 LFBGA TFBGA LFBGA TFBGA
封装等效代码 BGA208,17X17,32 BGA208,17X17,32 BGA208,17X17,32 BGA208,17X17,32
封装形状 SQUARE SQUARE SQUARE SQUARE
封装形式 GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260
电源 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.7 mm 1.2 mm 1.7 mm 1.2 mm
最大待机电流 0.03 A 0.04 A 0.04 A 0.03 A
最小待机电流 3.15 V 3.15 V 3.15 V 3.15 V
最大压摆率 0.5 mA 0.48 mA 0.48 mA 0.5 mA
最大供电电压 (Vsup) 3.45 V 3.45 V 3.45 V 3.45 V
最小供电电压 (Vsup) 3.15 V 3.15 V 3.15 V 3.15 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
端子形式 BALL BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 30 30 30 30
宽度 15 mm 15 mm 15 mm 15 mm
Base Number Matches 1 1 1 1

 
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