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70V3399S133BCGI

产品描述Dual-Port SRAM, 128KX18, 4.2ns, CMOS, CBGA256, 17 X 17 MM X 1.4 MM, 1 MM PITCH, GREEN, BGA-256
产品类别存储    存储   
文件大小238KB,共23页
制造商IDT (Integrated Device Technology)
标准
下载文档 详细参数 选型对比 全文预览

70V3399S133BCGI概述

Dual-Port SRAM, 128KX18, 4.2ns, CMOS, CBGA256, 17 X 17 MM X 1.4 MM, 1 MM PITCH, GREEN, BGA-256

70V3399S133BCGI规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
零件包装代码BGA
包装说明LBGA, BGA256,16X16,40
针数256
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间4.2 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)133 MHz
I/O 类型COMMON
JESD-30 代码S-CBGA-B256
JESD-609代码e1
长度17 mm
内存密度2359296 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度18
湿度敏感等级3
功能数量1
端口数量2
端子数量256
字数131072 words
字数代码128000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织128KX18
输出特性3-STATE
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码LBGA
封装等效代码BGA256,16X16,40
封装形状SQUARE
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源2.5/3.3,3.3 V
认证状态Not Qualified
座面最大高度1.7 mm
最大待机电流0.04 A
最小待机电流3.15 V
最大压摆率0.48 mA
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度17 mm
Base Number Matches1

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LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018
HIGH-SPEED 3.3V
IDT70V3319/99S
256/128K x 18
SYNCHRONOUS
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
– Self-timed write allows fast cycle time
Separate byte controls for multiplexed bus and bus
matching compatibility
Dual Cycle Deselect (DCD) for Pipelined Output mode
LVTTL- compatible, single 3.3V (±150mV) power supply
for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Industrial temperature range (-40°C to +85°C) is
available at 133MHz.
Available in a 128-pin Thin Quad Flatpack, 208-pin fine
pitch Ball Grid Array, and 256-pin Ball
Grid Array
Supports JTAG features compliant to IEEE 1149.1
– Due to limited pin count, JTAG is not supported on the
128-pin TQFP package
Green parts available, see ordering information
Features:
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed data access
– Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)
– Industrial: 4.2ns (133MHz) (max.)
Selectable Pipelined or Flow-Through output mode
– Due to limited pin count PL/
FT
option is not supported
on the 128-pin TQFP package. Device is pipelined
outputs only on each port.
Counter enable and repeat features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 6ns cycle time, 166MHz operation (6Gbps bandwidth)
– Fast 3.6ns clock to data out
– 1.7ns setup to clock and 0.5ns hold on all control, data, and
address inputs @ 166MHz
– Data input, address, byte enable and control registers
Functional Block Diagram
UB
L
LB
L
UB
R
LB
R
FT/PIPE
L
1/0
0a 1a
a
0b 1b
b
1b 0b
b
1a 0a
a
1/0
FT/PIPE
R
R/W
L
CE
0L
CE
1L
1
0
1/0
B
W
0
L
B
W
1
L
B B
WW
1 0
R R
1
0
1/0
R/W
R
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
1b 0b 1a 0a
0a 1a 0b 1b
0/1
,
FT/PIPE
R
FT/PIPE
L
0/1
ab
ba
256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
CLK
L
A
17L(1)
A
0L
REPEAT
L
ADS
L
CNTEN
L
CLK
R
,
A
17R(1)
Counter/
Address
Reg.
ADDR_L
ADDR_R
Counter/
Address
Reg.
A
0R
REPEAT
R
ADS
R
CNTEN
R
5623 tbl 01
NOTE:
1. A
17
is a NC for IDT70V3399.
TDI
JTAG
TDO
TCK
TMS
TRST
JUNE 2018
DSC
5623/11
1
©2018 Integrated Device Technology, Inc.

70V3399S133BCGI相似产品对比

70V3399S133BCGI 70V3399S133PRFG 70V3399S133PRFGI 70V3319S133BCG 70V3319S133BFGI 70V3319S133BFG 70V3319S133PRFG
描述 Dual-Port SRAM, 128KX18, 4.2ns, CMOS, CBGA256, 17 X 17 MM X 1.4 MM, 1 MM PITCH, GREEN, BGA-256 Dual-Port SRAM, 128KX18, 4.2ns, CMOS, PQFP128, 14 X 20 MM X 1.4 MM, GREEN, PLASTIC, TQFP-128 Dual-Port SRAM, 128KX18, 4.2ns, CMOS, PQFP128, 14 X 20 MM X 1.4 MM, GREEN, PLASTIC, TQFP-128 Dual-Port SRAM, 256KX18, 4.2ns, CMOS, CBGA256, 17 X 17 MM X 1.4 MM, 1 MM PITCH, GREEN, BGA-256 Dual-Port SRAM, 256KX18, 4.2ns, CMOS, CBGA208, 15 X 15 MM X 1.4 MM, 0.80 MM PITCH, GREEN, FPBGA-208 Dual-Port SRAM, 256KX18, 4.2ns, CMOS, CBGA208, 15 X 15 MM X 1.4 MM, 0.80 MM PITCH, GREEN, FPBGA-208 Dual-Port SRAM, 256KX18, 4.2ns, CMOS, PQFP128, 14 X 20 MM X 1.4 MM, GREEN, PLASTIC, TQFP-128
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 BGA QFP QFP BGA BGA BGA QFP
包装说明 LBGA, BGA256,16X16,40 LFQFP, QFP128,.63X.87 LFQFP, QFP128,.63X.87 LBGA, BGA256,16X16,40 LFBGA, BGA208,17X17,32 LFBGA, BGA208,17X17,32 LFQFP, QFP128,.63X.87
针数 256 128 128 256 208 208 128
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 4.2 ns 4.2 ns 4.2 ns 4.2 ns 4.2 ns 4.2 ns 4.2 ns
其他特性 FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK) 133 MHz 133 MHz 133 MHz 133 MHz 133 MHz 133 MHz 133 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 S-CBGA-B256 R-PQFP-G128 R-PQFP-G128 S-CBGA-B256 S-CBGA-B208 S-CBGA-B208 R-PQFP-G128
JESD-609代码 e1 e3 e3 e1 e1 e1 e3
长度 17 mm 20 mm 20 mm 17 mm 15 mm 15 mm 20 mm
内存密度 2359296 bit 2359296 bit 2359296 bit 4718592 bit 4718592 bit 4718592 bit 4718592 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 18 18 18 18 18 18 18
湿度敏感等级 3 3 3 3 3 3 3
功能数量 1 1 1 1 1 1 1
端口数量 2 2 2 2 2 2 2
端子数量 256 128 128 256 208 208 128
字数 131072 words 131072 words 131072 words 262144 words 262144 words 262144 words 262144 words
字数代码 128000 128000 128000 256000 256000 256000 256000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 70 °C 85 °C 70 °C 70 °C
组织 128KX18 128KX18 128KX18 256KX18 256KX18 256KX18 256KX18
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
封装代码 LBGA LFQFP LFQFP LBGA LFBGA LFBGA LFQFP
封装等效代码 BGA256,16X16,40 QFP128,.63X.87 QFP128,.63X.87 BGA256,16X16,40 BGA208,17X17,32 BGA208,17X17,32 QFP128,.63X.87
封装形状 SQUARE RECTANGULAR RECTANGULAR SQUARE SQUARE SQUARE RECTANGULAR
封装形式 GRID ARRAY, LOW PROFILE FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260 260 260 260
电源 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.7 mm 1.6 mm 1.6 mm 1.7 mm 1.7 mm 1.7 mm 1.6 mm
最大待机电流 0.04 A 0.03 A 0.04 A 0.03 A 0.04 A 0.03 A 0.03 A
最小待机电流 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V
最大压摆率 0.48 mA 0.4 mA 0.48 mA 0.4 mA 0.48 mA 0.4 mA 0.4 mA
最大供电电压 (Vsup) 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V
最小供电电压 (Vsup) 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Matte Tin (Sn) - annealed
端子形式 BALL GULL WING GULL WING BALL BALL BALL GULL WING
端子节距 1 mm 0.5 mm 0.5 mm 1 mm 0.8 mm 0.8 mm 0.5 mm
端子位置 BOTTOM QUAD QUAD BOTTOM BOTTOM BOTTOM QUAD
处于峰值回流温度下的最长时间 30 30 30 30 30 30 30
宽度 17 mm 14 mm 14 mm 17 mm 15 mm 15 mm 14 mm
Base Number Matches 1 1 1 1 1 1 1
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