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7024L35JI

产品描述Multi-Port SRAM, 4KX16, 35ns, CMOS, PQCC84
产品类别存储   
文件大小183KB,共22页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

7024L35JI概述

Multi-Port SRAM, 4KX16, 35ns, CMOS, PQCC84

7024L35JI规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
Reach Compliance Codeunknown
ECCN代码EAR99
最长访问时间35 ns
I/O 类型COMMON
JESD-30 代码S-PQCC-J84
内存密度65536 bit
内存集成电路类型MULTI-PORT SRAM
内存宽度16
端口数量2
端子数量84
字数4096 words
字数代码4000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织4KX16
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码QCCJ
封装等效代码LDCC84,1.2SQ
封装形状SQUARE
封装形式CHIP CARRIER
并行/串行PARALLEL
电源5 V
认证状态Not Qualified
最大待机电流0.004 A
最小待机电流2 V
最大压摆率0.25 mA
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式J BEND
端子节距1.27 mm
端子位置QUAD
Base Number Matches1

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HIGH-SPEED
4K x 16 DUAL-PORT
STATIC RAM
IDT7024S/L
Features
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Military: 20/25/35/55/70ns (max.)
– Industrial: 55ns (max.)
– Commercial: 15/17/20/25/35/55ns (max.)
Low-power operation
– IDT7024S
Active: 750mW (typ.)
Standby: 5mW (typ.)
– IDT7024L
Active: 750mW (typ.)
Standby: 1mW (typ.)
Separate upper-byte and lower-byte control for multiplexed
bus compatibility
IDT7024 easily expands data bus width to 32 bits or more
using the Master/Slave select when cascading more than
one device
M/S = H for
BUSY
output flag on Master
M/S = L for
BUSY
input on Slave
Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Battery backup operation—2V data retention
TTL-compatible, single 5V (±10%) power supply
Available in 84-pin PGA, Flatpack, PLCC, and 100-pin Thin
Quad Flatpack
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts availble, see ordering information
Functional Block Diagram
R/W
L
UB
L
R/W
R
UB
R
LB
L
CE
L
OE
L
LB
R
CE
R
OE
R
I/O
8L
-I/O
15L
I/O
0L
-I/O
7L
BUSY
L
A
11L
A
0L
(1,2)
I/O
8R
-I/O
15R
I/O
Control
I/O
Control
I/O
0R
-I/O
7R
BUSY
R
Address
Decoder
12
(1,2)
MEMORY
ARRAY
12
Address
Decoder
A
11R
A
0R
CE
L
OE
L
R/W
L
SEM
L
(2)
INT
L
NOTES:
1. (MASTER):
BUSY
is output; (SLAVE):
BUSY
is input.
2.
BUSY
outputs and
INT
outputs are non-tri-stated push-pull.
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
R
OE
R
R/W
R
SEM
R
INT
R
(2)
2740 drw 01
M/S
JUNE 2013
1
©2013 Integrated Device Technology, Inc.
DSC 2740/14

7024L35JI相似产品对比

7024L35JI 7024L25PFI 7024L55JI
描述 Multi-Port SRAM, 4KX16, 35ns, CMOS, PQCC84 Dual-Port SRAM, 4KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Dual-Port SRAM, 4KX16, 55ns, CMOS, PQCC84, PLASTIC, LCC-84
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Reach Compliance Code unknown compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99
最长访问时间 35 ns 25 ns 55 ns
JESD-30 代码 S-PQCC-J84 S-PQFP-G100 S-PQCC-J84
内存密度 65536 bit 65536 bit 65536 bit
内存集成电路类型 MULTI-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 16 16 16
端子数量 84 100 84
字数 4096 words 4096 words 4096 words
字数代码 4000 4000 4000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C
组织 4KX16 4KX16 4KX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QCCJ QFP QCCJ
封装形状 SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER FLATPACK CHIP CARRIER
并行/串行 PARALLEL PARALLEL PARALLEL
标称供电电压 (Vsup) 5 V 5 V 5 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 J BEND GULL WING J BEND
端子位置 QUAD QUAD QUAD
Base Number Matches 1 1 1
是否Rohs认证 不符合 - 不符合
I/O 类型 COMMON - COMMON
端口数量 2 - 2
输出特性 3-STATE - 3-STATE
封装等效代码 LDCC84,1.2SQ - LDCC84,1.2SQ
电源 5 V - 5 V
认证状态 Not Qualified - Not Qualified
最大待机电流 0.004 A - 0.004 A
最小待机电流 2 V - 2 V
最大压摆率 0.25 mA - 0.25 mA
端子节距 1.27 mm - 1.27 mm
包装说明 - QFP, PLASTIC, LCC-84
其他特性 - INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN 4K X 16 DUAL PORT SRAM
JESD-609代码 - e0 e0
功能数量 - 1 1
最大供电电压 (Vsup) - 5.5 V 5.5 V
最小供电电压 (Vsup) - 4.5 V 4.5 V
端子面层 - TIN LEAD Tin/Lead (Sn85Pb15)

 
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