REVISIONS
LTR
A
DESCRIPTION
Change to military drawing format. Changes to output adjustment range. Add
conditions for load regulation test at -55
G
C and +125
G
C. Change group A
subgroups for load regulation and line regulation tests, and output voltage
temperature coefficient. Add vendor CAGE 64155. Editorial changes
throughout.
Add vendor CAGE 07933. Add vendor CAGE 54186. Add case outline 2.
Change output voltage temperature coefficient test limits.
Add device type 02. Editorial changes throughout. Delete vendors CAGEs
54186 and 07933. Add vendor CAGE 1ES66.
Add class V devices. Replace CAGE 06665 with 24355. Add case outline H
and TABLE IIB. Make changes to 1.2.2 and TABLE II.
Add radiation hardness assurance requirements. - ro
Make changes to 1.5, table IIA, 4.4.1b, and output voltage temperature
coefficient test as specified in table I. - ro
Add device types 03 and 04. Make changes 1.2.2 and to the output voltage
noise test as specified under TABLE I. - ro
DATE (YR-MO-DA)
88-03-17
APPROVED
M. A. FRYE
B
89-04-12
M. A. FRYE
C
92-11-25
M. A. FRYE
D
97-06-10
R. MONNIN
E
F
98-08-07
00-01-21
R. MONNIN
R. MONNIN
G
01-02-07
R. MONNIN
THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.
CURRENT CAGE CODE 67268
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
PREPARED BY
JOSEPH A. KERBY
G
1
G
2
G
3
G
4
G
5
G
6
G
7
G
8
G
9
G
10
G
11
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
RAY MONNIN
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
APPROVED BY
MICHAEL A. FRYE
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, +5 VOLT ADJUSTABLE PRECISION
VOLTAGE REFERENCE, MONOLITHIC SILICON
DRAWING APPROVAL DATE
86-03-08
AMSC N/A
REVISION LEVEL
G
SIZE
A
SHEET
CAGE CODE
14933
1 OF
11
85514
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
5962-E333-00
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following examples.
For device classes M and Q:
85514
01
G
X
Drawing number
~
~
~
Device
type
(see 1.2.2)
~
~
~
Case
outline
(see 1.2.4)
~
~
~
Lead
finish
(see 1.2.5)
~
~
~
For device class V:
5962
Federal
stock class
designator
\
~
~
~
R
RHA
designator
(see 1.2.1)
/
\/
Drawing number
~
~
~
85514
01
Device
type
(see 1.2.2)
~
~
~
Device
class
designator
(see 1.2.3)
~
~
~
V
Case
outline
(see 1.2.4)
~
~
~
G
Lead
finish
(see 1.2.5)
~
~
~
X
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
03
04
Generic number
REF02A
REF02
REF02A
REF02
Circuit function
Precision reference +5-volt
adjustable output
Precision reference +5-volt
adjustable output
Precision reference +5-volt
adjustable output
Precision reference +5-volt
adjustable output
Output voltage noise
18
P
V
P-P
18
P
V
P-P
100
P
V
P-P
100
P
V
P-P
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
85514
SHEET
G
2
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed
below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q
designators will not be included in the PIN and will not be marked on the device.
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant,
non-JAN class level B microcircuits in accordance with MIL-PRF-38535,
appendix A
Certification and qualification to MIL-PRF-38535
Q or V
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
G
H
P
2
Descriptive designator
MACY1-X8
GDFP1-F10 or CDFP2-F10
GDIP1-T8 or CDIP2-T8
CQCC1-N20
Terminals
8
10
8
20
Package style
Can
Flat pack
Dual-in-line
Square leadless chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/
Input voltage (V
IN
) ...........................................................................................40 V dc
Power dissipation (P
D
).....................................................................................500 mW 2/
Output short circuit duration.............................................................................Indefinite
Storage temperature ........................................................................................-65
q
C to +150
q
C
Lead temperature (soldering, 10 seconds) ......................................................+300
q
C
Junction temperature (T
J
) ................................................................................+150
q
C
Thermal resistance, junction-to-case (
T
JC
)......................................................See MIL-STD-1835
1.4 Recommended operating conditions.
Ambient operating temperature range (T
A
)......................................................-55
q
C to +125
q
C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si) / s)...................100 Krads 3/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Derate 7.1 mW/
q
C above +80
q
C for the "G" and "H" packages, 6.6 mW/
q
C above +75
q
C for the "P" package, and
7.8 mW/
q
C above +72
q
C for the "2" package.
3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,
method 1019, condition A.
1/
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
85514
SHEET
G
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 -
MIL-STD-1835 -
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings (SMD's).
Standard Microcircuit Drawings.
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2.
3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post irradiation parameter limits are as specified in table I and shall apply over the
full ambient operating temperature range.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
85514
SHEET
G
4
TABLE I. Electrical performance characteristics.
Conditions 1/
-55
q
C
d
T
A
d
+125
q
C
unless otherwise specified
No load
Test
Symbol
Group A
subgroups
1
2,3
Device
type
Min
All
Limits
Max
1.4
2.0
Unit
Quiescent supply current
I
SY
mA
M,D,P,L,R 2/ 3/
Output adjustment 4/
range
Output voltage
1
1
1
01
All
01,03
02,04
1.4
'
V
TRIM
V
O
R
P
= 10 k
:
, T
A
= +25
q
C
I
L
= 0 mA
r
3.0
4.985
4.975
4.978
4.953
4.975
+15
-0.3
0.01
0.015
0.012
0.015
0.010
0.012
0.015
0.030
10
18
100
5.015
5.025
5.022
5.047
5.025
+60
%
V
2,3
M,D,P,L,R 2/ 3/
Short circuit current 4/
Sink current 4/
Load regulation
I
OS
I
S
LD reg
V
O
= 0 V, T
A
= +25
q
C
T
A
= +25
q
C
I
L
= 0 mA to 10 mA 5/
M,D,P,L,R 2/ 3/
I
L
= 0 mA to 8 mA 5/
Line regulation
LN reg
V
IN
= 8 V to 33 V 5/
1
1
1
1
1
2,3
01,03
02,04
01
All
All
All
01
01,03
02,04
mA
mA
%/mA
1
01,03
02,04
%/V
2,3
M,D,P,L,R 2/ 3/
Load current
Output voltage noise
I
L
enp-p
T
A
= +25
q
C 4/ 6/
0.1 Hz to 10 Hz 4/
1
1
4
All
01
All
01,02
03,04
mA
P
V
P-P
ppm/
q
C
Output voltage
temperature coefficient
TCV
O
4/ 7/
8
01,03
02,04
r
8.5
r
25
1/ V
IN
= 15 V.
2/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, and R of irradiation. However,
this device is only tested at the "R" level. Pre and Post irradiation values are identical unless otherwise specified
in table I. When performing post irradiation electrical measurements for any RHA level, T
A
= +25
q
C.
3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,
method 1019, condition A.
4/ This parameter is not tested to post irradiation.
5/ Line and load regulation specifications include the effect of self heating.
6/ Minimum of 10 mA load current guaranteed by load regulation test.
6
7/ TCV
O
= (V
MAX
- V
MIN
) / 5 V x ((-55
q
C to +125
q
C) x (1 x 10 )) / 180
q
C.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
85514
SHEET
G
5
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