DE275-501N16A
RF Power MOSFET
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
Symbol
Test Conditions
T
c
= 25°C
Derate 1.9W/°C above 25°C
T
c
= 25°C
V
DSS
I
D25
Maximum Ratings
500
500
±20
±30
16
96
16
20
5
>200
590
284
3.0
0.25
0.53
Characteristic Values
T
J
= 25°C unless otherwise specified
=
=
=
=
500 V
16 A
0.4
Ω
590 W
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
c
= 25°C
T
c
= 25°C, pulse width limited by T
JM
T
c
= 25°C
T
c
= 25°C
I
S
≤
I
DM
, di/dt
≤
100A/µs, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2Ω
I
S
= 0
R
DS(on)
P
DC
V
V
V
V
A
A
A
mJ
V/ns
GATE
DRAIN
V/ns
W
W
W
C/W
C/W
SG1
SG2
SD1
SD2
Features
•
Isolated Substrate
−
high isolation voltage (>2500V)
−
excellent thermal transfer
−
Increased temperature and power
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
min.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
1.6mm(0.063 in) from case for 10 s
V
GS
= 0 V, I
D
= 3 ma
V
DS
= V
GS
, I
D
= 4 ma
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0
T
J
= 125°C
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
≤
300µS, duty cycle d
≤
2%
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
typ.
max.
V
5.5
±100
50
1
.38
V
nA
µA
mA
Ω
S
+175
°C
°C
+175
°C
°C
g
500
2.5
Advantages
•
Optimized for RF and high speed
•
•
High power density
switching at frequencies to 100MHz
Easy to mount—no insulators needed
10
-55
175
-55
300
2
DE275-501N16A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
min.
R
G
C
iss
C
oss
C
rss
C
stray
T
d(on)
T
on
T
d(off)
T
off
Q
g(on)
Q
gs
Q
gd
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
T
rr
Q
RM
I
RM
I
F
= I
S
, -di/dt = 100A/µs,
V
R
= 100V
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2
Ω
(External)
Back Metal to any Pin
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
typ.
0.3
1800
150
40
21
3
2
4
5
50
20
30
max.
Ω
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
min.
typ.
max.
6
98
1.5
200
0.6
4
A
A
V
ns
µC
A
Test Conditions
V
GS
= 0 V
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2%
For detailed device mounting and installation instructions, see the “DE-
Series MOSFET Mounting Instructions”
technical note on IXYS RF’s web
site at www.ixysrf.com/Technical_Support/App_notes.html
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
4,850,072
5,049,961
5,640,045
4,881,106
5,063,307
4,891,686
5,187,117
4,931,844
5,237,481
5,017,508
5,486,715
DE275-501N16A
RF Power MOSFET
10000
Ciss
Coss
Crss
Capacitance in pF
1000
100
10
0
50
100
150
200
250
Vd s i n Vo l t s
300
350
400
450
500
275-501N16A Capacitances vs Vds
DE275-501N16A
RF Power MOSFET
501N16A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of
the device, Rds is the resistive leakage term. The output capacitance, C
OSS
, and reverse transfer
capacitance, C
RSS
are modeled with reversed biased diodes. This provides a varactor type re-
sponse necessary for a high power device model. The turn on delay and the turn off delay are
adjusted via Ron and Roff.
10 DRAIN
Ld
4
Rd
Lg
20 GATE
Doff
Roff
D1crs
D2crs
5
Ron
Don
6
8
1
M3
3
Dcos
Rds
2
7
Ls
30 SOURCE
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
SYM=POWMOSN
.SUBCKT 501N16A 10 20 30
* TERMINALS: D G S
* 500 Volt 16 Amp .38 ohm N-Channel Power MOSFET
* REVA 6-15-00
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .2
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.0N
RD 4 1 .38
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M)
.MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M)
.ENDS
Doc #9200-0222 Rev 3
© 2003 IXYS RF
An
IXYS
Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
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