Bulletin PD-20406 rev. A 05/05
30BQ015PbF
SCHOTTKY RECTIFIER
3 Amp
I
F(AV)
= 3.0Amp
V
R
= 15V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ t
p
= 5 µs sine
V
F
T
J
@ 1.0Apk, T
J
= 75°C
range
Description/ Features
Units
A
V
A
V
°C
The 30BQ015PbF surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. The proprietary barrier tech-
nology allows for reliable operation up to 125°C junction
temperature. Typical applications are in disk drives, switching
power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
125°C T
J
operation (V
R
< 5V)
Optimized for OR-ing applications
Ultra low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Lead-Free ("PbF" suffix)
Value
3.0
15
650
0.30
- 55 to 125
Case Styles
30BQ015PbF
SMC
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1
30BQ015PbF
Bulletin PD-20406 rev. A 05/05
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
30BQ015PbF
15
25
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
30BQ
3.0
4.0
Units Conditions
A
50% duty cycle @ T
L
= 83 °C, rectangular wave form
50% duty cycle @ T
L
= 78 °C, rectangular wave form
A
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
mJ
A
T
J
= 25 °C, I
AS
= 0.5A, L = 12mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current
Non Repetitive Avalanche Energy
Repetitive Avalanche Current
650
75
1.5
0.5
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(1)
30BQ
0.35
0.40
0.30
0.35
Units Conditions
V
V
V
V
mA
mA
pF
nH
V/µs
@ 3A
@ 6A
@ 3A
@ 6A
T
J
=
25 °C
V
R
= rated V
R
T
J
= 75 °C
T
J
= 25 °C
I
RM
C
T
L
S
Max. Reverse Leakage Current (1)
4
50
T
J
= 100 °C
V
R
= 5V
DC
(test signal range 100KHz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
(Rated V
R
)
Max. Junction Capacitance
Typical Series Inductance
1120
3.0
10000
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Storage Temperature Range
(**)
46
°C/W DC operation
30BQ
- 55 to 150
12
Units
°C
°C
°C/W DC operation
Conditions
Max. Junction Temperature Range (*) - 55 to 125
R
thJL
Max. Thermal Resistance
Junction to Lead
R
thJA
Max. Thermal Resistance
Junction to Ambient
wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
dTj
<
1
0.24 (0.008) g (oz.)
SMC
IR3C
Similar to DO-214AB
thermal runaway condition for a diode on its own heatsink
Rth( j-a)
(**) Mounted 1 inch square PCB
2
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30BQ015PbF
Bulletin PD-20406 rev. A 05/05
10
100
T J = 100˚C
Reverse Current - I
R
(mA)
10
75˚C
50˚C
1
25˚C
Instantaneous Forward Current - I
F
(A)
0.1
T = 100˚C
J
J
J
0.01
0
3
6
9
12
Reverse Voltage - V
R
(V)
15
T = 75˚C
1
T = 25˚C
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
1000
Junction Capacitance - C
T
(p F)
T = 25˚C
J
0.1
0
0.1
0.2
0.3
0.4
Forward Voltage Drop - V
FM
(V)
0.5
100
0
4
8
12
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
16
Fig. 1 - Max. Forward Voltage Drop Characteristics
(Per Leg)
100
(°C/W)
10
Thermal Impedance Z
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
thJC
P
DM
t1
t2
1
Notes:
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t 2
2. Peak Tj = Pdm x ZthJC + Tc
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
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3
30BQ015PbF
Bulletin PD-20406 rev. A 05/05
110
Allowable Lead Temperature (°C)
100
90
80
70
60
50
0
1
DC
Average Power Loss (Watts)
D=0.20
D=0.25
D=0.33
D=0.50
D=0.75
1.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1
RMS Limit
DC
0.5
Square wave (D=0.50)
80% Rated Vr applied
see note (2)
0
2
3
4
5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Average Forward Current - I
F(AV)
(A)
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Non-Repetitive Surge Current - I
FSM
(A)
1000
100
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
10
10
100
1000
10000
Square Wave Pulse Duration - T
p
(Microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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30BQ015PbF
Bulletin PD-20406 rev. A 05/05
Outline Table
Device Marking: IR3C
2.75 (.108)
3.15 (.124)
5.59 (.220)
6.22 (.245)
CATHODE
ANODE
6.60 (.260)
7.11 (.280)
.152 (.006)
.305 (.012)
2.00 (.079)
2.62 (.103)
0.76 (.030)
1.52 (.060)
7.75 (.305)
8.13 (.320)
.102 (.004)
.203 (.008)
1
2
1 POLARITY
2 PART NUMBER
Outline SMC
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR3C
VOLTAGE
CURRENT
IR LOGO
PYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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MEMS传感器
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