HMC-ALH140
v00.0907
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
Features
Noise Figure: 4 dB
Gain: 11.5 dB
P1dB Output Power: +15 dBm
Supply Voltage: +4V @ 60 mA
Die Size: 2.5 x 1.4 x 0.1 mm
Typical Applications
This HMC-ALH140 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
AMPLIFIERS - LOW NOISE - CHIP
• VSAT
• SATCOM
Functional Diagram
General Description
The HMC-ALH140 is a two Stage GaAs MMIC HEMT
Low Noise Amplifier die which operates between
24 and 40 GHz. The amplifier provides 11.5 dB of
gain, from a bias supply of +4V @ 66 mA with
a noise figure of 4 dB. The HMC-ALH140 amplifier
die is ideal for integration into Multi-Chip-Modules
(MCMs) due to its small size (2.10 mm2).
Electrical Specifi cations
,
T
A
= +25° C, Vdd= 4V
[1]
, Idd = 60mA
[2]
Parameter
Frequency Range
Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression
Supply Current (Idd)
10
Min.
Typ.
24 - 30
12
4
13
15
15
60
100
10
Max.
Min.
Typ.
24 - 40
11.5
4
13
15
15
60
100
10
Max.
Min.
Typ.
35 - 40
11.5
4
20
20
15
60
100
dB
dB
dBm
mA
Max.
Units
GHz
dB
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V)
0-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH140
v00.0907
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
Noise Figure vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd= 2 V, Id = 55 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
0-3
AMPLIFIERS - LOW NOISE - CHIP
HMC-ALH140
v00.0907
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
RF Input Power
Channel Temperature
+5.5 Vdc
-1 to +0.3 Vdc
6 dBm
180 °C
-65 to +150 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
AMPLIFIERS - LOW NOISE - CHIP
Storage Temperature
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
0-4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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