HMC589ST89
/
589ST89E
v02.0907
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
8
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Typical Applications
The HMC589ST89 / HMC589ST89E is ideal for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Features
P1dB Output Power: +21 dBm
Gain: 21 dB
Output IP3: +33 dBm
Single Supply: +5V
Industry Standard SOT89 Package
Functional Diagram
General Description
The HMC589ST89 & HMC589ST89E are InGaP HBT
Gain Block MMIC SMT amplifiers covering DC to
4 GHz and packaged in an industry standard
SOT89. The amplifier can be used as a cascadable
50 Ohm RF or IF gain stage as well as a LO or PA
driver with up to +19 dBm P1dB output power for
cellular/3G, FWA, CATV, microwave radio and test
equipment applications. The HMC589ST89(E)
offers 20 dB gain and +33 dBm output IP3 at 1
GHz while requiring only 82 mA from a single
positive supply. The HMC589ST89(E) InGaP HBT gain
block offers excellent output power and gain stability
over temperature.
Electrical Specifi cations,
Vs= 5.0 V, Rbias= 1.8 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 5.0 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
DC - 4.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
Min.
19
16
14
13
Typ.
21
19
17
15
0.008
17
11
12
10
23
21
19
19
17.5
33
32
30.5
29
4.0
4.5
82
Max.
Units
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
17.5
16
16
14.5
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
102
Note: Data taken with broadband bias tee on device output.
8 - 154
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC589ST89
/
589ST89E
v02.0907
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
Gain vs. Temperature
24
22
20
18
GAIN (dB)
16
14
12
10
8
6
4
2
0
+25 C
+85 C
-40 C
5
0
-5
-10
-15
-20
-25
-30
0
1
2
3
4
S21
S11
S22
5
6
7
8
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25 C
+85 C
-40 C
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
+25C
+85C
-40C
INPUT RETURN LOSS (dB)
-5
-5
-10
-10
-15
-15
-20
-20
-25
0
1
2
3
4
5
FREQUENCY (GHz)
-25
0
1
2
3
4
5
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
-5
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
+25 C
+85 C
-40 C
-10
-15
-20
-25
-30
0
1
2
+25 C
+85 C
-40 C
7
6
5
4
3
2
1
0
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8
HMC589ST89
/
589ST89E
v02.0907
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
8
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
P1dB vs. Temperature
24
22
20
18
P1dB (dBm)
16
14
12
10
8
6
4
0
1
2
3
4
5
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Psat vs. Temperature
28
26
24
22
Psat (dBm)
20
18
16
14
12
10
8
6
4
0
1
2
3
4
5
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Output IP3 vs. Temperature
40
38
36
34
OIP3 (dBm)
32
30
28
26
24
22
20
0
1
2
3
4
5
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Gain, Power & OIP3 vs. Supply Voltage
@ 850 MHz, Rbias = 1.8 Ohms
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
36
32
28
24
20
16
12
8
4
0
4.5
Gain
P1dB
Psat
OIP3
5
Vs (Vdc)
5.5
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, R
BIAS
= 1.8 Ohms
90
88
86
84
+25 C
Icc (mA)
82
80
78
76
74
72
70
4.83
4.84
4.85
4.86
-40 C
4.87
4.88
+85 C
Vcc (Vdc)
8 - 156
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC589ST89
/
589ST89E
v02.0907
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +5 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 8.4 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+10 dBm up to 1 GHz
+8 dBm from 1-4 GHz
150 °C
0.546 W
119 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
HMC589ST89
HMC589ST89E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H589
XXXX
H589
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8
HMC589ST89
/
589ST89E
v02.0907
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
8
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
IN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
OUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom
must be connected to RF/DC ground.
Application Circuit
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc
Supply Voltage (Vs)
R
BIAS
V
ALUE
R
BIAS
P
OWER
R
ATING
5V
1.8 Ω
1
/
8
6V
13 Ω
¼W
8V
38 Ω
½W
W
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 μF
900
56 nH
100 pF
1900
24 nH
100 pF
2200
24 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
4000
8.2 nH
100 pF
8 - 158
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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