MA4E2513L-1289
SURMOUNT
TM
Low Barrier Tee “0301” Footprint Silicon
Schottky Diodes
Features
•
Extremely Low Parasitic Capitance and Inductance
•
Extremely Small “0301” (1000 x 300 um) Footprint
•
Surface Mountable in Microwave Circuits, No Wire-
•
•
•
bonds Required
Rugged HMIC Construction with Polyimide Scratch
Protection
Reliable, Multilayer Metalization with a Diffusion Bar-
rier, 100 % Stabilization Bake (300°C, 16 hours)
Lower Susceptibility to ESD Damage
M/A-COM Products
Rev. V2
Case Style 1289
(Top, Side, & Bottom Views)
A
B
Description and Applications
The MA4E2513L-1289 SURMOUNT
TM
Diodes are Sili-
con Low Barrier Schottky Devices fabricated with the
patented Heterolithic Microwave Integrated Circuit
(HMIC) process. HMIC circuits consist of Silicon pedes-
tals which form diodes or via conductors embedded in
glass dielectric, which acts as the low dispersion, micro-
strip transmission medium. The combination of silicon
and glass allows HMIC devices to have excellent loss
and power dissipation characteristics in a low profile,
reliable device.
The Surmount Schottky devices are excellent choices for
circuits requiring the small parasitics of a beam lead de-
vice coupled with the superior mechanical performance
of a chip. The Surmount structure employs very low re-
sistance silicon vias to connect the Schottky contacts to
the metalized mounting pads on the bottom surface of
the chip. These devices are reliable, repeatable, and a
lower cost performance solution to conventional devices.
They have lower susceptibility to electrostatic discharge
than conventional beam lead Schottky diodes.
The multi-layer metalization employed in the fabrication
of the Surmount Schottky junctions includes a platinum
diffusion barrier, which permits all devices to be sub-
jected to a 16-hour non-operating stabilization bake at
300°C.
The extremely small “0301” outline allows for Surface
Mount placement and multi-functional polarity orienta-
tions.
The MA4E2513L-1289 SURMOUNT
TM
Diode is recom-
mended for use in microwave circuits through Ku band
frequencies for lower power applications such as mixers,
sub-harmonic mixers, detectors, and limiters. The HMIC
construction facilitates the direct replacement of more
fragile beam lead diodes with the corresponding sur-
mount diode, which can be connected to a hard or soft
substrate circuit with solder.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
Visit www.macom.com for additional data sheets and product information.
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
C
D
E
D
E
D
B
Cathode 1
Common
Anode 2
DIM
A
B
C
D
E
INCHES
MIN.
0.038
0.011
0.004
0.007
0.007
MILLIMETERS
MIN.
0.975
0.275
0.102
0.175
0.175
MAX.
0.040
0.013
0.008
0.009
0.009
MAX.
1.025
0.325
0.203
0.225
0.225
MA4E2513L-1289
SURMOUNT
TM
Low Barrier Tee “0301” Footprint Silicon
Schottky Diodes
Electrical Specifications @ 25°C (per junction)
1,2
Model Number
Type
Recommended
Freq. Range
Vf @ 1 mA
(mV)
330 Max
300 Typ
M/A-COM Products
Rev. V2
Vb @ 10 uA
(V)
3 Min
5 Typ
Ct @ 0 V
(pF)
0.12 Max
0.10 Typ
Rt Slope Resistance
(Vf1 - Vf2) /
(10.5mA - 9.5 mA)
(Ω)
10 Typ
14 Max
MA4E2513L-1289
Low Barrier
DC - 18 GHz
1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the Ohmic resistance.
2. DC parameters noted above are referenced to the contact (mounting) side of the chip.
Handling
All semiconductor chips should be handled with
care to avoid damage or contamination from per-
spiration and skin oils. The use of plastic tipped
tweezers or vacuum pickups is strongly recom-
mended for individual components. The top sur-
face of the die has a protective polyimide coating to
minimize damage.
The rugged construction of these Surmount de-
vices allows the use of standard handling and die
attach techniques. It is important to note that in-
dustry standard electrostatic discharge (ESD) con-
trol is required at all times, due to the sensitive na-
ture of Schottky junctions. Bulk handling should
insure that abrasion and mechanical shock are
minimized.
Die Bonding
Die attach for these devices is made simple
through the use of surface mount die attach tech-
nology. Mounting pads are conveniently located on
the bottom surface of these devices, and are oppo-
site the active junction. These devices are well
suited for high temperature solder attachment onto
hard substrates. 80Au/20Sn and Sn63/Pb37 sol-
ders are acceptable for usage. Die attach with
electrically conductive silver epoxy is not recom-
mended.
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When solder-
ing to soft substrates, it is recommended to use a
lead-tin interface at the circuit board mounting
pads. Position the die so that its mounting pads
are aligned with the circuit board mounting pads.
Reflow the solder paste by applying equal heat to
the circuit at both die-mounting pads. The solder
joint must not be made one at a time, creating un-
equal heat flow and thermal stress. Solder reflow
should not be performed by causing heat to flow
through the top surface of the die. Since the HMIC
glass is transparent, the edges of the mounting
pads can be visually inspected through the die after
the die attach is completed.
Absolute Maximum Ratings
3
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Forward Current
Reverse Voltage
RF C.W. Incident Power
RF & DC Dissipated Power
Value
-40°C to 150°C
-40°C to 150°C
+175°C
20 mA
5V
+20 dBm
50 mW
3. Exceeding any of these values may result in permanent dam-
age.
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
Visit www.macom.com for additional data sheets and product information.
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
MA4E2513L-1289
SURMOUNT
TM
Low Barrier Tee “0301” Footprint Silicon
Schottky Diodes
MA4E2513L-1289 Low Barrier SPICE PARAMETERS
Is
(nA)
26
M/A-COM Products
Rev. V2
Rs
(Ω)
12.8
N
1.20
Cj0
(pF)
1.0 E-2
M
0.5
Ik
(mA)
14
Cjpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
0.5
BV
(V)
5.0
IBV
(mA)
1.0 E-2
Typical Performance
0.140
0.120
Total Capacitance (pF)
0.100
0.080
0.060
0.040
0.020
0.000
0
100
200
300
400
500
Frequency (MHz)
Circuit Mounting Dimensions (Inches)
Ordering Information
Part Number
MA4E2513L-1289W
MA4E2513L-1289
Packaging
Wafer on Frame
Die in Carrier
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
Visit www.macom.com for additional data sheets and product information.
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
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