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70V7319S200BCG

产品描述Dual-Port SRAM, 256KX18, 3.4ns, PBGA256, 17 X 17 MM, 1.4 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256
产品类别存储    存储   
文件大小220KB,共21页
制造商IDT (Integrated Device Technology)
标准
下载文档 详细参数 选型对比 全文预览

70V7319S200BCG概述

Dual-Port SRAM, 256KX18, 3.4ns, PBGA256, 17 X 17 MM, 1.4 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256

70V7319S200BCG规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
零件包装代码BGA
包装说明LBGA,
针数256
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间3.4 ns
JESD-30 代码S-PBGA-B256
JESD-609代码e1
长度17 mm
内存密度4718592 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度18
湿度敏感等级3
功能数量1
端子数量256
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX18
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装形状SQUARE
封装形式GRID ARRAY, LOW PROFILE
并行/串行SERIAL
峰值回流温度(摄氏度)260
座面最大高度1.4 mm
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度17 mm
Base Number Matches1

文档预览

下载PDF文档
HIGH-SPEED 3.3V 256K x 18
SYNCHRONOUS
BANK-SWITCHABLE
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
Features:
IDT70V7319S
256K x 18 Synchronous Bank-Switchable Dual-ported
SRAM Architecture
64 independent 4K x 18 banks
– 4 megabits of memory on chip
Bank access controlled via bank address pins
High-speed data access
– Commercial: 3.4ns (200MHz)/3.6ns (166MHz)/
4.2ns (133MHz) (max.)
– Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)
Selectable Pipelined or Flow-Through output mode
Counter enable and repeat features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 5ns cycle time, 200MHz operation (14Gbps bandwidth)
– Fast 3.4ns clock to data out
– 1.5ns setup to clock and 0.5ns hold on all control, data, and
address inputs @ 200MH
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
Separate byte controls for multiplexed bus and bus
matching compatibility
LVTTL- compatible, 3.3V (±150mV) power supply
for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Industrial temperature range (-40°C to +85°C) is
available at 166MHz and 133MHz
Available in a 208-pin fine pitch Ball Grid Array (fpBGA) and
256-pin Ball Grid Array (BGA)
Supports JTAG features compliant with IEEE 1149.1
Green parts available, see ordering information
Functional Block Diagram
PL/FT
L
OPT
L
CLK
L
ADS
L
CNTEN
L
REPEAT
L
R/W
L
CE
0L
CE
1L
UB
L
LB
L
OE
L
PL/FT
R
OPT
R
CLK
R
ADS
R
CNTEN
R
REPEAT
R
R/W
R
CE
0R
CE
1R
UB
R
LB
R
OE
R
CONTROL
LOGIC
MUX
4Kx18
MEMORY
ARRAY
(BANK 0)
MUX
CONTROL
LOGIC
I/O
0L-17L
I/O
CONTROL
MUX
4Kx18
MEMORY
ARRAY
(BANK 1)
MUX
I/O
CONTROL
I/O
0R-17R
A
11L
A
0L
BA
5L
BA
4L
BA
3L
BA
2L
BA
1L
BA
0L
ADDRESS
DECODE
ADDRESS
DECODE
A
11R
A
0R
BA
5R
BA
4R
BA
3R
BA
2R
BA
1R
BA
0R
BANK
DECODE
MUX
4Kx18
MEMORY
ARRAY
(BANK 63)
BANK
DECODE
NOTE:
1. The Bank-Switchable dual-port uses a true SRAM
core instead of the traditional dual-port SRAM core.
As a result, it has unique operating characteristics.
Please refer to the functional description on page 19
for details.
MUX
,
TDI
TDO
JTAG
TMS
TCK
TRST
5629 drw 01
APRIL 2010
1
DSC 5629/9
©2010 Integrated Device Technology, Inc.

70V7319S200BCG相似产品对比

70V7319S200BCG 70V7319S166BCG 70V7319S166BCG1
描述 Dual-Port SRAM, 256KX18, 3.4ns, PBGA256, 17 X 17 MM, 1.4 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256 Dual-Port SRAM, 256KX18, 3.6ns, CMOS, PBGA256, 17 X 17 MM, 1.4 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256 Dual-Port SRAM, 256KX18, 3.6ns, CMOS, PBGA256, 17 X 17 MM, 1.4 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256
是否无铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 BGA BGA BGA
包装说明 LBGA, LBGA, LBGA,
针数 256 256 256
Reach Compliance Code compliant compliant compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 3.4 ns 3.6 ns 3.6 ns
JESD-30 代码 S-PBGA-B256 S-PBGA-B256 S-PBGA-B256
JESD-609代码 e1 e1 e1
长度 17 mm 17 mm 17 mm
内存密度 4718592 bit 4718592 bit 4718592 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 18 18 18
湿度敏感等级 3 3 3
功能数量 1 1 1
端子数量 256 256 256
字数 262144 words 262144 words 262144 words
字数代码 256000 256000 256000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 85 °C
组织 256KX18 256KX18 256KX18
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LBGA LBGA LBGA
封装形状 SQUARE SQUARE SQUARE
封装形式 GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
并行/串行 SERIAL SERIAL SERIAL
峰值回流温度(摄氏度) 260 260 260
座面最大高度 1.4 mm 1.4 mm 1.4 mm
最大供电电压 (Vsup) 3.45 V 3.45 V 3.45 V
最小供电电压 (Vsup) 3.15 V 3.15 V 3.15 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL INDUSTRIAL
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
端子形式 BALL BALL BALL
端子节距 1 mm 1 mm 1 mm
端子位置 BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 30 30 30
宽度 17 mm 17 mm 17 mm
Base Number Matches 1 1 1

 
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